Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

Fang, X. M.; Chao, I-Na; Strecker, B. N.; McCann, Patrick J.; Yuan, Shijian; Liu, W. K.; Santos, M. B.

doi:10.1116/1.589965

Cited by 13 publications

(8 citation statements)

References 13 publications

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“…Recently, high-quality epitaxial growth of PbSe and related materials on ͑111͒-oriented Si substrates has been accomplished by incorporating thin intermediate BaF 2 /CaF 2 buffer layers. 1,2 Heteroepitaxial growth of PbSe on silicon takes advantage of silicon integration technology to obtain inexpensive photonic devices. Infrared sensor arrays with 3-12 m cutoff wavelengths in PbSe and PbSnSe layers grown heteroepitaxially on Si͑111͒ have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface

Fang

Salas

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Epitaxial growth of PbSe/BaF 2 /CaF 2 heterostructures was carried out by molecular beam epitaxy ͑MBE͒ on Si͑111͒ wafers. Successful transfer of 3-m-thick PbSe epilayers was accomplished by bonding the MBE-grown samples face down to polished copper plates followed by the removal of the silicon substrate by dissolving the BaF 2 buffer layer in water. High-resolution x-ray diffraction measurements demonstrated that the PbSe epilayer maintained high-crystalline quality after transfer. In addition, optical Nomarski characterization of the exposed growth interface showed sets of parallel straight step lines consistent with glide of dislocations in the primary ͕100͖͗110͘ glide system. Such features are evidence of the large thermal expansion mismatch strain that occurred in these layers.

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Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface

Fang

Salas

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[24][25][26]45]. More recently, the growth has been done with the use of cracker cell [49,57]. For example, Zhang et al [49] used a radio-frequency cracker cell to grow Bi 2 Se 3 on CaF 2 .…”

Section: Atomic Flux Ratiomentioning

confidence: 99%

Review of 3D topological insulator thin‐film growth by molecular beam epitaxy and potential applications

Kou

Wang

2013

Physica Rapid Research Ltrs

153

152

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Abstractmagnified imageThin films of V–VI compound semiconductors (Bi2Se3, Bi2Te3 and Sb2Te3) have been synthesized recently as three‐dimensional topological insulators (TIs). Although these materials have been used as thermoelectric materials for many years, for future studies and applications of the topological surface states, a major bottleneck remains the lack of high‐quality bulk materials that have very few defects and the Fermi level can be moved to inside the bulk bandgap. In this paper, we review the use of molecular beam epitaxy (MBE) technique to achieve high‐quality TI materials. Furthermore, the use of layered growth in MBE affords us the fabrication of heterostructures, such as quantum wells and superlattices. Thus, it may further enable additional studies and applications, similar to those of conventional semiconductor heterostructures but with the novel properties of TI. We explore the growth mechanism, providing a detail discussion on the growth parameters of thin‐film synthesis by MBE. Then we discuss more complex cases, such as functional doping, heterostructures and superlattices. Potential new properties in such quantum structures are discussed. Finally, we give an outlook on this material system for both fundamental studies and applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…J – V analysis of the n-PbSe/p-Ge heterostructure reveals a high resistance reverse bias p–n junction formation with a low reverse bias current density of only 1.9 mA/cm 2 under −100 mV reverse bias. Such strong p–n heterojunction behavior utilizing the MWIR PbSe absorber with SWIR Ge absorber could find great success in MWIR and SWIR photodetector applications, with easy integration into 2-color detector systems . While the current J – V statistics is attributed to the n-PbSe/p-Ge heterojunction, further investigations will be performed to determine the possible influence that the Se-treated interface has on the overall carrier flow behavior, along with the possible diffusion of Bi dopants into the germanium substrate.…”

Section: Resultsmentioning

confidence: 99%

Integration of Epitaxial IV–VI Pb-Chalcogenide on Group IV Vicinal Ge Substrate to Form p–n Heterogeneous Structures

McDowell

Qiu

Mirzaei

et al. 2021

Crystal Growth & Design

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Integration of monocrystalline PbSe with vicinal Ge substrate is reported. The heterogeneous p−n junction structure combines the merits of both materials, with the potential to form a dual-band detector structure. The lattice constant and thermal expansion coefficient mismatch between PbSe and Ge typically prohibit the formation of a strong epitaxial interface, but its observation here is attributed to the enhanced surface kinetics influenced by the in situ surface treatment of the Ge substrate prior to PbSe deposition. The creation of a crack-free monocrystalline n-PbSe film on p-Ge substrate demonstrates a strong p−n heterojunction behavior with high rectifying factor and low reverse bias current density. Low X-ray diffraction (XRD) full width at half-maximum (FWHM) and strong photoluminescence (PL) indicate the formation of high-quality PbSe(100) films on industrystandard vicinal Ge(100) substrates, providing potential uses for photodetector and other heterojunction applications.

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Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)

Cited by 13 publications

References 13 publications

Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface

Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface

Review of 3D topological insulator thin‐film growth by molecular beam epitaxy and potential applications

Integration of Epitaxial IV–VI Pb-Chalcogenide on Group IV Vicinal Ge Substrate to Form p–n Heterogeneous Structures

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