Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene

Song, Can-Li; Wang, Yilin; Jiang, Yeping; Li, Zhi; Wang, Lili; He, Ke; Chen, Xi; Ma, Xu-Cun; Xue, Qi‐Kun

doi:10.1103/physrevb.84.020503

Cited by 172 publications

(149 citation statements)

References 23 publications

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“…Type A defects appear as two bright spots on neighboring atom sites and have been previously identified as a Se atom on or close to an Fe site [20][21][22] or an Fe vacancy [23]. Type B defects appear as depressions at an atomic site at the top of the film.…”

Section: Structural Characterizationmentioning

confidence: 99%

Absence of superconductivity in ultrathin layers of FeSe synthesized on a topological insulator

Eich¹,

Rollfing²,

Arnold

et al. 2016

Phys. Rev. B

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The structural and electronic properties of FeSe ultrathin layers on Bi 2 Se 3 have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multilayers, which are predominantly 3-5 monolayers (MLs) thick, exhibit a hole pocket-like electron band at¯ and a dumbbell-like feature atM, similar to multilayers of FeSe on SrTiO 3 . Moreover, the topological state of the Bi 2 Se 3 is preserved beneath the FeSe layer, as indicated by a heavily n-doped Dirac cone. Low temperature scanning tunneling spectroscopy does not exhibit a superconducting gap for any investigated thickness down to a temperature of 5 K.

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Section: Structural Characterizationmentioning

confidence: 99%

Absence of superconductivity in ultrathin layers of FeSe synthesized on a topological insulator

Eich¹,

Rollfing²,

Arnold

et al. 2016

Phys. Rev. B

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“…• C, again for 12 h. There is very limited mention of superconducting films grown by other common techniques, such as molecular beam epitaxy [27,28], metalorganic chemical vapor deposition (MOCVD) [29] and sputtering [30]. Recently, very thick (thickness 100 µm) superconducting films of FeSe (T onset c = 8 K) were successfully deposited by electrochemical route [31].…”

Section: Synthesis Morphology and Crystalline Structurementioning

confidence: 99%

“…Films grew epitaxially as confirmed by XRD patterns, and φ scan demonstrates that in-plane (100) and (010) axes of the FeSe thin film were aligned parallel to the (1-10) and (001) axes of the YAlO 3 substrate (figure 11). Song et al [46] reported on MBE of stoichiometric and superconducting FeSe crystalline thin films on double-layer graphene that was formed on SiC(0001). It was shown by scanning tunneling microscopy (STM) that this new kind of substrate can yield strain-free FeSe films.…”

Section: Fese X Filmsmentioning

confidence: 99%

Superconducting properties of iron chalcogenide thin films

Mele

2012

Science and Technology of Advanced Materials

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Iron chalcogenides, binary FeSe, FeTe and ternary FeTe x Se 1−x , FeTe x S 1−x and FeTe:O x , are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i) easy fabrication and epitaxial growth on common single-crystal substrates; (ii) strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe 0.5 Se 0.5 , zero-resistance transition temperature T bulk c0 = 13.5 K, but T film c0 = 19 K on LaAlO 3 substrate); (iii) high critical current density (J c ∼ 0.5 × 10 6 A cm 2 at 4.2 K and 0 T for FeTe 0.5 Se 0.5 film deposited on CaF 2 , and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition) with a weak dependence on magnetic field; (iv) high upper critical field (∼50 T for FeTe 0.5 Se 0.5 , B c2 (0), with a low anisotropy, γ ∼ 2). These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20-50 T) and low temperatures (2-10 K).

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“…Attempts at merging of graphene with FeSe were made previously. Thus, the floating phenomenon in case of FeSe on graphene [28] is taken as starting point in the present investigation.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Manifold of States Achieved in Heterostructures of Iron Selenide and Boron-Doped Graphene

Cantatore

Panas

2017

Condensed Matter

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Enhanced superconductivity is sought by employing heterostructures composed of boron-doped graphene and iron selenide. Build-up of a composite manifold of near-degenerate noninteracting states formed by coupling top-of-valence-band states of FeSe to bottom-of-conductionband states of boron-doped graphene is demonstrated. Intra-and intersubsystem excitons are explored by means of density functional theory in order to articulate a normal state from which superconductivity may emerge. The results are discussed in the context of electron correlation in general and multi-band superconductivity in particular.

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Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene

Cited by 172 publications

References 23 publications

Absence of superconductivity in ultrathin layers of FeSe synthesized on a topological insulator

Absence of superconductivity in ultrathin layers of FeSe synthesized on a topological insulator

Superconducting properties of iron chalcogenide thin films

Enhanced Manifold of States Achieved in Heterostructures of Iron Selenide and Boron-Doped Graphene

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