Molecular Beam Epitaxy for Oxide Electronics

Order-Disorder Behavior at Thin Film Oxide Interfaces

“…Here we focus primarily on the various modes of molecular beam epitaxy (MBE), including elemental, chemical, metal-organic, and hybrid variants, which are among the most precise methods to engineer film structure and chemistry. [37][38][39] MBE enables epitaxial deposition of a wide variety of metal species in a clean, ultra-high vacuum environment under controlled oxygen partial pressure without the injection of energetic ion species. In a typical experiment, beams of metal atoms are generated produced by metal effusion cells, generating an atomic flux pointing toward a single crystalline substrate.…”

Separating Electrons and Donors in BaSnO3 via Band Engineering

“…4,[6][7][8] Although, these structures have yielded high-mobility 2DEGs at low temperatures exceeding 50,000 cm 2 /Vs, 9 their RT mobility has remained below 10 cm 2 /Vs. [10][11][12] This is mainly due to the strong electron-phonon coupling in SrTiO 3 . 12,13 Although other factors such as interface roughness, dislocations, and point defects can also affect 2DEGs' mobilities, electron mobilities at RT are largely limited by strong electron-phonon scattering in SrTiO 3 .…”

“…Interfaces between perovskite oxides have created tremendous excitement because of the potential for emergent phenomena and novel field-effect devices, resulting in over thousand publications. − The vast majority of these works focuses on the LaAlO 3 /SrTiO 3 (LAO/STO) − interface including some on Al 2 O 3 /STO and ReTiO 3 /STO (Re = rare earth element) ,, interfaces. Amazingly, all of these heterostructures involve the use of STO as an active layer where electron transport occurs. ,,, For this reason, room-temperature (RT) electron mobility in these interfaces has always remained <10 cm 2 V –1 s –1 − and has been ascribed to the strong electron–phonon scattering in STO. , …”