2001
DOI: 10.1116/1.1386378
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Molecular-beam-epitaxy growth and luminescence properties of Nd3+-doped LaF3/CaF2 thin films

Abstract: Nd 3+ -doped LaF3 heteroepitaxial waveguide films on two oriented CaF2 substrates were grown by the molecular-beam-epitaxy method. The spectroscopic properties of Nd3+ in the epitaxial films have been studied by using a tunable Ti:sapphire laser. Efficient IR emissions have been detected at 1.06, 0.86, and 1.32 nm ranges. The influences of substrate orientation, Nd3+ concentration, and temperature on the luminescence properties were investigated. By using a prism-coupling technique, waveguided luminescence has… Show more

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