Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

Lee, H.G.; Hong, Soon Ku; Kim, S.G.; Lee, K.S.; Kim, H.M.; Lee, J.J.; Pyun, Kwang Eui; Park, H.M.

doi:10.1016/s0022-0248(96)00897-4

Journal of Crystal Growth

1997

DOI: 10.1016/s0022-0248(96)00897-4

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Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

H.G. Lee

Soon Ku Hong

S.G. Kim

et al.

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Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

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References 5 publications

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