Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes

Rieger, Torsten; Luysberg, M.; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

doi:10.1021/nl302502b

Cited by 79 publications

(88 citation statements)

References 39 publications

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“…NWs [26], and massively in self-assembled III-Nitride NWs on Si(111) and was attributed to the natural tendency of one-dimensional structures to grow along the polar <111> and <0001> crystallographic directions without direct contact with the substrate [27,28,29].…”

Section: Structural Properties Of Gaasmentioning

confidence: 99%

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Kehagias¹,

Florini²,

Kioseoglou³

et al. 2015

Semicond. Sci. Technol.

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GaAs/AlGaAs core-shell nanowires were grown on Si(111) by Ga-assisted molecular beam epitaxy via the vapor-liquid-solid mechanism. High-resolution and scanning transmission electron microscopy observations showed that nanowires were predominantly zinc-blende single crystals of hexagonal shape, grown along the [111] direction. GaAs core nanowires emerged from the Si surface and subsequently, the nanowire growth front advanced by a continuous sequence of (111) rotational twins, while the AlGaAs shell lattice was perfectly aligned with the core lattice. Occasionally, single or multiple stacking faults induced wurtzite structure nanowire pockets. The AlGaAs shell occupied at least half of the nanowire's projected diameter, while the average Al content of the shell, estimated by energy dispersive X-ray analysis, was x = 0.35. Furthermore, molecular dynamics simulations of hexagonal cross-section nanowire slices, under a new parametrization of the Tersoff interatomic potential for AlAs, showed increased atom relaxation at the hexagon vertices of the shell. This, in conjunction with the compressively strained Al 0.35 Ga 0.65 As shell close to the GaAs core, can trigger a kinetic surface mechanism that could drive Al adatoms to accumulate at the relaxed sites of the shell, namely along the diagonals of the shell's hexagon. Moreover, the absence of long-range stresses in the GaAs/Al 0.35 Ga 0.65 As coreshell system may account for a highly stable heterostructure. The latter was consolidated by temperaturedependent photoluminescence spectroscopy.

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Section: Structural Properties Of Gaasmentioning

confidence: 99%

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Kehagias¹,

Florini²,

Kioseoglou³

et al. 2015

Semicond. Sci. Technol.

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“…This provides a possibility to control band alignment through the core and shell thicknesses [13,14] and thus to achieve systems in which conduction electrons may be found only in the shell area [15]. The present art of manufacturing allows for etching the core part such that the remaining shell forms a nanotube of finite thickness [16,17]. If such nanowires are sufficiently short, i.e., of height much smaller that the radius, then they may be considered as quantum rings, as long as only the lowest wave-function mode in the growth direction is relevant.…”

Section: Introductionmentioning

confidence: 99%

Multi-domain electromagnetic absorption of triangular quantum rings

et al. 2016

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We present a theoretical study of the unielectronic energy spectra, electron localization, and optical absorption of triangular core-shell quantum rings. We show how these properties depend on geometric details of the triangle, such as side thickness or corners' symmetry. For equilateral triangles, the lowest six energy states (including spin) are grouped in an energy shell, are localized only around corner areas, and are separated by a large energy gap from the states with higher energy which are localized on the sides of the triangle. The energy levels strongly depend on the aspect ratio of the triangle sides, i.e., thickness/length ratio, in such a way that the energy differences are not monotonous functions of this ratio. In particular, the energy gap between the group of states localized in corners and the states localized on the sides strongly decreases with increasing the side thickness, and then slightly increases for thicker samples. With increasing the thickness the low-energy shell remains distinct but the spatial distribution of these states spreads. The behavior of the energy levels and localization leads to a thickness dependent absorption spectrum where one transition may be tuned in the THz domain and a second transition can be tuned from THz to the infrared range of electromagnetic spectrum. We show how these features may be further controlled with an external magnetic field. In this work the electron-electron Coulomb repulsion is neglected.

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“…One of the advantages of these systems is a possibility to establish band alignment through the thicknesses of the components [2][3][4] and thus grow structures in which electrons are confined only in narrow shell areas [5,6]. Moreover, the core part may be etched such that separated nanotubes are formed [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…Most commonly CSNs have hexagonal cross-sections [6][7][8], but triangular [9,10] and circular [11] systems have also been achieved. Electrons confined in prismatic CSNs may form conductive channels along the sharp edges [2,[12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Conductance oscillations of core-shell nanowires in transversal magnetic fields

et al. 2016

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We analyze theoretically electronic transport through a core-shell nanowire in the presence of a transversal magnetic field. We calculate the conductance for a variable coupling between the nanowire and the attached leads and show how the snaking states, which are low-energy states localized along the lines of vanishing radial component of the magnetic field, manifest their existence. In the strong coupling regime they induce flux periodic, Aharonov-Bohm-like, conductance oscillations, which, by decreasing the coupling to the leads, evolve into well resolved peaks. The flux periodic oscillations arise due to interference of the snaking states, which is a consequence of backscattering at either the contacts with leads or magnetic/potential barriers in the wire.

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Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes

Cited by 79 publications

References 39 publications

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires

Multi-domain electromagnetic absorption of triangular quantum rings

Conductance oscillations of core-shell nanowires in transversal magnetic fields

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