Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Ahmed, Adam; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas E.; Kawakami, Roland

doi:10.1016/j.jcrysgro.2016.04.057

Cited by 7 publications

(6 citation statements)

References 34 publications

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“…The morphology of the surface obtained and thickness of the grown film were characterized using atomic force microscopy (AFM). Crystal structure and orientation was determined using two important techniques, RHEED and XRD [40].…”

Section: Synthesis Techniquementioning

confidence: 99%

“…A total of 25 nm SrO/HOPG was used, resulting in SrTiO₃ film having 001 orientation. Oxygen vacancies on SrO caused charge impurity scattering, resulting in Dirac point shifting and reducing the mobility [40]. Liyan Dai et al used the PLD technique, and highly oriented BTO films were grown.…”

Section: Research Issues and Perspectivementioning

confidence: 99%

“…If we assume that each oxygen vacancy donates two electrons and carrier density varies, each volt shift of the Dirac point corresponds to one vacancy per 42,000 oxygen atoms in 2 ML SrO. Future studies should focus on increasing mobility by increasing the SrO film quality through the reduction of oxygen vacancies and structural defects [40].…”

Section: Effect Of Insulating Layers On Performance Of Graphene Trans...mentioning

confidence: 99%

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Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Khanna

2022

Front. Phys.

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In electronics, the size of transistors has been reduced to a few nanometers. Electronic devices’ accuracy and authenticity face a major problem of leakage current. To solve this tricky situation, high-κ dielectrics which have a huge band gap and permittivity are established to increase the capacitance and remove the leakage current. Three major properties are related to current flow: 1) band gap, 2) resistance, and 3) dielectric constant. High-κ or higher dielectric constant shows how much charge a material can hold. A large band gap is needed to vanquish charge injection that causes leakage current. So, these are the insulating materials that store charges when placed in between metallic plates. The dielectric thickness of high-κ can be enhanced without enhancing the capacitance, hence reducing the leakage current. These materials need to be functionalized. Materials with low physical and chemical barriers need to be functionalized with them. The best material to be integrated with these high-κ dielectrics is graphene, as the goal of large area uniformity of electrical properties is achievable with this and easily separable graphene is also available. Here, we will scrutinize the current advancement in graphene electronics-based research on high-κ dielectrics such as Al₂O₃ (used as obstructing oxide in charge trap flash memory) with graphene. This article reviews the amalgamation of oxides such as high-κ dielectrics with graphene, which are necessary for the understanding of top-gated electronic devices made by graphene which includes field-effect transistors and other electronic devices.

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Section: Synthesis Techniquementioning

confidence: 99%

Section: Research Issues and Perspectivementioning

confidence: 99%

Section: Effect Of Insulating Layers On Performance Of Graphene Trans...mentioning

confidence: 99%

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Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Khanna

2022

Front. Phys.

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“…The VSe 2 RHEED pattern is streaky with irregularly spaced streaks denoting in-plane disorder which matches the underlying HOPG substrate. This invariance occurs because the HOPG substrate is not single crystalline, but rather has a textured, (0001) out-of-plane orientation and the grains have random in-plane orientations [268]. Thus, the RHEED images of the HOPG and the VSe 2 overlayer are a superposition of all azimuthal angles.…”

Section: Growth Of Vse 2 On Hopg Surfacesmentioning

confidence: 99%

Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets

O'Hara

2019

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“…In contrast, the SrO layer appears to be predominantly amorphous. The amorphous structure is somewhat surprising given our previous observation of (001) textured growth of SrO thin films on HOPG substrates as well as on epitaxial graphene on SiC(0001), but the conditions for growth and postprocessing are different during graphene spin valve fabrication. We believe that the amorphous structure of SrO, which is free of grain boundaries found in polycrystalline films, as well as the smooth film morphology contribute to the robustness that the SrO barriers display under high current density and, in turn, allows us to realize large spin accumulation as discussed later.…”

mentioning

confidence: 99%

Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene

et al. 2017

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The quality of the tunnel barrier at the ferromagnet/graphene interface plays a pivotal role in graphene spin valves by circumventing the impedance mismatch problem, decreasing interfacial spin dephasing mechanisms and decreasing spin absorption back into the ferromagnet. It is thus crucial to integrate superior tunnel barriers to enhance spin transport and spin accumulation in graphene. Here, we employ a novel tunnel barrier, strontium oxide (SrO), onto graphene to realize high quality spin transport as evidenced by room-temperature spin relaxation times exceeding a nanosecond in graphene on silicon dioxide substrates. Furthermore, the smooth and pinhole-free SrO tunnel barrier grown by molecular beam epitaxy (MBE), which can withstand large charge injection current densities, allows us to experimentally realize large spin accumulation in graphene at room temperature. This work puts graphene on the path to achieve efficient manipulation of nanomagnet magnetization using spin currents in graphene for logic and memory applications.

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Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Cited by 7 publications

References 34 publications

Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets

Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene

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