Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties

Abstract

GaSb films were grown by molecular beam epitaxy on vicinal Si(001) substrates with miscut angles of 6o to the (111) plane. Films were formed on AlSb(001)/Al/As/Si, AlSb(001)/Al/As/Si, GaSb(001)/Ga/P/Si and GaSb(001)/P/Ga/Si transition layers. The influence of orientation, composition, and formation conditions of transition layers on the crystal perfection and optical properties of GaSb films was studied. The GaSb film grown on the GaSb(001)/Ga/P/Si(001) transition layer has the best structural and optical properties. Keywords: molecular beam epitaxy, GaSb on Si(001), crystallographic orientation of the film, transition layers, antiphase domains, crystal perfection.