Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

Krishnaswami, Kannan; Vangala, Shivashankar; Dauplaise, H.M.; Allen, L.P.; Dallas, G.; Bakken, Daniel; Bliss, D.; Goodhue, W. D.

doi:10.1016/j.jcrysgro.2007.11.225

Cited by 5 publications

(2 citation statements)

References 18 publications

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“…Therefore, today it is of certain scientific and practical importance to study the effect of binary compounds on the crystal lattice, leading to a substantial alteration in the properties of silicon [4][5]. GaSb layers were obtained on various substrates by the authors [6][7] using the modern technique of molecular beam epitaxy, while their properties were studied by X-ray diffraction analysis [8], Raman spectroscopy [9], transmission electron microscopy (TEM) [10][11]. The possibilities of manufacturing highprecision electronic devices [12][13][14] and manufacturing infrared sensors [15][16] are shown.…”

Section: Introductionmentioning

confidence: 99%

X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

Iliyev,

Odzhaev,

Isamov

et al. 2023

East Eur. J. Phys.

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The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3. For diffusion into silicon, Ga and Sb impurities were used with a purity of 99.999 and 99.998, respectively. The authors propose that a new heterostructure might form in the near-surface region of silicon that could be engineered by applying a relatively cheap diffusion method. The experimental and analysis results show that the composition and absorption spectrum of silicon start manifest certain changes, and can be used in the future as a functional material for solar cells. The result showed that randomly located islands with an average diameter of 1–15 µm are formed on the substrate surface. X-ray diffraction analysis was carried out using a Rigaku diffractometer to study the crystallographic parameters of islands formed with the participation of Ga and Sb atoms on the silicon surface. The energy spectrum was studied on Nanofinder High End Raman spectrometer (LOTIS TII) in order to determine the presence of complexes of Ga and Sb atoms within islands formed as a result of diffusion. The optical emission spectra in the new structure were studied using a Lambda 950 spectrophotometer. The measurements were carried out at room temperature, i.e., at 300°K. Having studied the results of X-ray analysis, Raman spectroscopy, and optical spectroscopy, the authors have revealed that Ga and Sb atoms form new Si0.44(GaSb)0.56 and Si0.75(GaSb)0.25-type binary compounds on Si surface.

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Section: Introductionmentioning

confidence: 99%

X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

Iliyev,

Odzhaev,

Isamov

et al. 2023

East Eur. J. Phys.

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“…In addition, unavoidable scratches can occur on the GaSb wafer surface owing to its low hardness. Various processing methods, such as chemical mechanical polishing (CMP), dry ion etch techniques and gas cluster ion beams, have been developed to improve the surface quality of GaSb wafers (Krishnaswami et al, 2008). Regardless of the technique used, control of the GaSb substrate surface relies on accurate process parameters and precise operations.…”

Section: Introductionmentioning

confidence: 99%

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

Yan¹,

Liang²,

Liu³

et al. 2021

Front. Mater.

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Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate surface quality. In this study, the chemical mechanical polishing of GaSb wafers is investigated by considering the effects of the polishing pad, polishing solution, polishing time and pH buffer on their surface morphology and roughness. The surface morphology and root mean square (RMS) roughness of the free-standing wafers are characterized using a white light interferometer, a laser interferometer and an atomic force microscope. X-ray tomography is employed to measure the surface crystalline quality and strain defects of the samples subjected to the polishing treatments. The results show that with the optimum polishing condition, the polished GaSb wafers demonstrate high-quality surfaces without haze, scratches or strain defect regions. The peak to valley value is 5.0 μm and the RMS roughness can be controlled at less than 0.13 nm. A buffer layer grown on the GaSb surface with molecular beam epitaxy is examined via atomic force microscopy and high-resolution X-ray diffraction, which show a low RMS roughness of 0.159 nm, a well-controlled two-dimensional growth mode and a full width half maximum of the Bragg diffraction peak of 14.2”, indicating high-quality GaSb wafers. Thus, this work provides useful guidelines for achieving GaSb wafers with high-quality surfaces that show significant promise for substrate applications.

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Impurities related micro-defects in GaSb crystal grown by LEC method

Liu,

Yang,

Huang

et al. 2024

Journal of Crystal Growth

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Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

Cited by 5 publications

References 18 publications

X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

Impurities related micro-defects in GaSb crystal grown by LEC method

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