Molecular Beam Epitaxy

Herman, Marian A.; Sitter, H.

doi:10.1007/978-3-642-97098-6

Cited by 201 publications

(86 citation statements)

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“…Apart from the cross-hatch dislocation pattern, one typically observes point-like defects (PD) with a surface density of about 10 4 /cm 2 , which have a size and shape typical of those ascribed as oval defects 17 . PDs are better visible in the regions of lower density of crosshatches, however were observed in all regions, and for different MC samples which we investigated until now.…”

Section: Introductionmentioning

confidence: 99%

Polariton states bound to defects in GaAs/AlAs planar microcavities

et al. 2012

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We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These defects, also known as oval defects, result in a dome-like local modulation of surface, which is translated into the cavity structure and leads to a lateral modulation of the cavity polariton energy of up to 15 meV. The resulting spatially localized potential landscape for the in-plane polariton motion creates a series of bound states. These states were characterized by spectrally resolved transmission imaging in real and reciprocal space, and reveal the spatial potential created by the defects. Interestingly, the defect states exhibit long lifetimes in the 10 ps range, which we attribute to a spatially smooth confinement potential.

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Section: Introductionmentioning

confidence: 99%

Polariton states bound to defects in GaAs/AlAs planar microcavities

et al. 2012

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“…1(b) Fig. 1 46,47 In the low strain growth mode, the directional property of the substrate is transferred to the islands grown on it. Moreover, the tendency of forming dash-like shapes was reported for InAs islands grown on InAlAs buffers on InP(001) substrates.…”

Section: As Barriersmentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra J. Appl. Phys. 113, 073502 (2013) Influence of structural anisotropy to anisotropic electron mobility in a-plane InN Appl. Phys. Lett. 102, 061904 (2013) Sub-250nm light emission and optical gain in AlGaN materials J. Appl. Phys. 113, 013106 (2013) Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1−xAs double heterostructure thin films under resonant and non-resonant probe conditions J. Appl. Phys. 113, 013514 (2013) Additional information on J. Appl. Phys.

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“…Typeset using REVT E X 1 One of the main interests of usual deposition techniques such as Molecular Beam Epitaxy [1] is that the structure of the deposited films is to a large extent determined by kinetic factors, as opposed to thermodynamic equilibrium. This allows to "play games" [2] with the different growth parameters (incident flux of particles, diffusion coefficient of an adatom .…”

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The effect of a modulated flux on the growth of thin films

Jensen

Niemeyer

1997

Surface Science

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Thin films are usually obtained by depositing atoms with a continuous flux.We show that using a chopped flux changes the growth and the morphology of the film. A simple scaling analysis predicts how the island densities change as a function of the frequency of the chopped flux in simple cases where aggregation is irreversible. These predictions are confirmed by computer simulations.We show that the model can be used to obtain information on the diffusion or the evaporation of the adatoms. The model is also useful to understand the growth of thin films prepared by pulsed sources.Typeset using REVT E X 1 One of the main interests of usual deposition techniques such as Molecular Beam Epitaxy [1] is that the structure of the deposited films is to a large extent determined by kinetic factors, as opposed to thermodynamic equilibrium. This allows to "play games" [2] with the different growth parameters (incident flux of particles, diffusion coefficient of an adatom . . . ) in order to obtain different film morphologies. A simple example is given by the quantity of islands grown on a substrate at low enough temperatures : it is known that the number of islands at saturation is given by (F/D) 1/3 [3][4][5] where F is the incident flux and D the diffusion coefficient. Then, by increasing the flux or decreasing the diffusion constant (by lowering the substrate temperature), one can adjust the saturation number of islands grown on the substrate. In this sense, each kinetic factor is a "handle" on the system, allowing to control the morphology of the films. We introduce in this Letter a new kinetic handle, which should enable a larger control over film growth : the chopping of the incident flux. We note that this flux modulation is intrinsic to other deposition techniques such as cluster laser vaporization (the laser is pulsed [6]). It is therefore important to understand how growth proceeds in the presence of a modulated flux if one is to be able to interpret experiments performed in these conditions. For example, one may wonder whether the usual growth theories [3][4][5] can be used by replacing the continuous flux by the average value of the chopped flux over a cycle. In the following, we will show that this is not the case, and that the growth of the film is profoundly changed by the modulation of the incident flux for the case of growth with irreversible aggregation (critical island size 1, see [3][4][5][7][8][9]. Conversely, we show what kind of information can be derived from experiments carried under these conditions.The basic idea of our method is that if instead of using a continuous flux we use a chopped flux to grow a film, the number of islands formed on a substrate will depend on the chopping frequency f and on d, the fraction of the period the flux is "on" (see Fig. 1).This dependence is due to the fact that the free particle concentration on the surface does not reach its steady state concentration instantaneously, but only after a time which we will call τ m . Then, if the timescale of the chopping (...

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Molecular Beam Epitaxy

Cited by 201 publications

References 0 publications

Polariton states bound to defects in GaAs/AlAs planar microcavities

Polariton states bound to defects in GaAs/AlAs planar microcavities

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

The effect of a modulated flux on the growth of thin films

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