2021
DOI: 10.1039/d1sc04491e
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Molecular bixbyite-like In12-oxo clusters with tunable functionalization sites for lithography patterning applications

Abstract: Indium oxides have been widely applied in many technology areas, but their utilization in lithography has not been developed. Herein, we illustrated a family of unprecedented In12-oxo clusters with general...

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Cited by 17 publications
(20 citation statements)
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“…Finally, the applications of the coordinationdelayed-hydrolysis strategy could be extended. On one hand, it can be used to synthesize oxo clusters of other easily hydrolyzed metal ions (some progress has already been made in Al-oxo clusters, 60 Sn-oxo clusters, 61 and In-oxo clusters 62 ). On the other hand, besides clusters, it might also be conducive to the synthesis of materials difficult to crystallize by other conventional methods, for example, Ti-based metal− organic frameworks (Ti-MOFs).…”
Section: Discussionmentioning
confidence: 99%
“…Finally, the applications of the coordinationdelayed-hydrolysis strategy could be extended. On one hand, it can be used to synthesize oxo clusters of other easily hydrolyzed metal ions (some progress has already been made in Al-oxo clusters, 60 Sn-oxo clusters, 61 and In-oxo clusters 62 ). On the other hand, besides clusters, it might also be conducive to the synthesis of materials difficult to crystallize by other conventional methods, for example, Ti-based metal− organic frameworks (Ti-MOFs).…”
Section: Discussionmentioning
confidence: 99%
“…[1][2][3][4] The EUV scanner is an indispensable lithography tool to produce modern semiconductors with 20 nm half pitch (HP) for 7 nm or smaller nodes. One major reason is that the efficiency of EUV absorptions of transition metal complexes such as Zn, [5][6][7] Sn, [8][9][10][11] Hf, [12][13][14][15][16][17][18] Zr, [19][20][21][22][23][24] Co 25 and In 26 is much higher than those of polymer-based photoresists by 2-3 fold. In the context of metal-based photoresists, hafnium oxide photoresists (Scheme 1) are particularly notable because of high Hf density, rendering their EUV lithographic patterns very impressive.…”
Section: Introductionmentioning
confidence: 99%
“…During the past few decades, the semiconductor world has witnessed the astonishing evolution of electronic chips with the shrinking of the node size at a faster rate than expected. Among several technological aspects responsible for such amazing developments, the remarkable progress in the area of lithography where resist technology plays an important role has been a critical factor. Coping with the fast-changing semiconductor nodes has been a grand challenge for resist developers.…”
Section: Introductionmentioning
confidence: 99%