Molecular control of a GaAs transistor

Gartsman, K.; Cahen, David; Kadyshevitch, A.; Libman, Jacqueline; Moav, Tamar; Naaman, Ron; Shanzer, Abraham; Umansky, V.; Vilan, Ayelet

doi:10.1016/s0009-2614(97)01387-0

Cited by 62 publications

(54 citation statements)

References 14 publications

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“…[9] The use of the molecules-semiconductor combination to measure molecule-sensed changes with the semiconductor was utilized already 35 years ago in the ''CHEMFET'' configuration, [195] where adsorbed molecules ''gate'' the current of an underlying conducting channel. Significant sensitivity improvement became possible by inducing a pseudo-2D electron gas in the semiconductor, [6,196] and a pseudo-1D one in Si nano-wires [7,8] or carbon nano-tubes. [9] The principle that is common to nearly all these approaches [197] is that the event of molecular recognition changes the charge density available for conduction between two electrodes and by that changes the net current.…”

Section: Chemical and Biochemical Sensorsmentioning

confidence: 99%

Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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Section: Chemical and Biochemical Sensorsmentioning

confidence: 99%

Molecules on Si: Electronics with Chemistry

et al. 2009

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“…1B) (5)(6)(7). In these devices, the gate is replaced by a self-assembled monolayer (SAM) of molecules such as alkyl phosponates or dithiolated alkyls, for example.…”

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confidence: 99%

“…Analyte binding to the exposed surface of the SAM causes redistribution of the electronic charge (in particular, around the SAM-substrate interface) that can change the electrostatic potential in the substrate conductive channel. Such a device is a molecular controlled semiconductor resistor (MOCSER) (5,(9)(10)(11)(12), where the current is affected by an analyte-dependent gate voltage. Indeed, MOCSER responses can be triggered by analyte binding [including molecules of biological and biomedical relevance (13,14)] or by radiation (15,16).…”

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confidence: 99%

Sensing of molecules using quantum dynamics

Migliore¹,

Naaman

Beratan

2015

Proc. Natl. Acad. Sci. U.S.A.

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We design sensors where information is transferred between the sensing event and the actuator via quantum relaxation processes, through distances of a few nanometers. We thus explore the possibility of sensing using intrinsically quantum mechanical phenomena that are also at play in photobiology, bioenergetics, and information processing. Specifically, we analyze schemes for sensing based on charge transfer and polarization (electronic relaxation) processes. These devices can have surprising properties. Their sensitivity can increase with increasing separation between the sites of sensing (the receptor) and the actuator (often a solid-state substrate). This counterintuitive response and other quantum features give these devices favorable characteristics, such as enhanced sensitivity and selectivity. Using coherent phenomena at the core of molecular sensing presents technical challenges but also suggests appealing schemes for molecular sensing and information transfer in supramolecular structures.

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“…Semiconductor devices, which are based on transistor-like structures, are ideal candidates for biosensing applications due to their low production cost, small size, and direct conversion of the sensing event to changes in electrical current. Specifically, gallium arsenide (GaAs)-based sensors have interesting properties owing to the high mobility of the charge carriers and the high sensitivity to surface potential changes [6]. Moreover, the use of GaAs makes it possible to design heterostructures with special electronic properties, such as 2D electron gas and quantum wells [7].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the use of GaAs makes it possible to design heterostructures with special electronic properties, such as 2D electron gas and quantum wells [7]. One of the promising platforms for biosensing is the Molecular Controlled Semiconductor Resistor (MOCSER) [6,8], based on GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT), which was shown to be applicable for various sensing applications [9][10][11][12]. Due to their electronic properties, GaAs-based sensors were found to be superior to silicon-based devices in terms of sensitivity [8,13].…”

Section: Introductionmentioning

confidence: 99%

Enabling Long-Term Operation of GaAs-Based Sensors

Tkachev¹,

Anand-Kumar²,

Bitler³

et al. 2013

ENG

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A coating scheme was developed for enabling the operation of a GaAs-based Molecular Controlled Semiconductor Resistor (MOCSER) under biological conditions. Usually GaAs is susceptible to etching in an aqueous environment. Several methods of protecting the semiconductor based devices were suggested previously. However, even when protected, it is very difficult to ensure the operation of a GaAs-based electronic sensor in aqua solution for long periods. We developed a new depositing scheme of (3-mercaptopropyl)-trimethoxysilane (MPTMS) on GaAs substrate consisting of two separate steps. The first involves chemisorption of a dense primary MPTMS layer on the substrate, whereas in the second, a thin MPTMS polymer layer is deposited on the already adsorbed layer, resulting in a 15 -29 nm thick coating. We show that applying the new MPTMS deposition procedure to GaAs-based MOCSER devices allows up to 15 hours of continuous electrical measurements and stable performance of the sensing device in harsh biological environment. The new protection allows implementing GaAs technology in bioelectronics, particularly in biosensing.

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Molecular control of a GaAs transistor

Cited by 62 publications

References 14 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

Sensing of molecules using quantum dynamics

Enabling Long-Term Operation of GaAs-Based Sensors

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