Molecular doping applied to Si nanowires array based solar cells

Puglisi, Rosaria A.; Garozzo, C.; Bongiorno, Corrado; Franco, Salvatore Di; Italia, M.; Mannino, Giovanni; Scalese, S.; Magna, Antonino La

doi:10.1016/j.solmat.2014.08.040

Cited by 41 publications

(33 citation statements)

References 28 publications

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“…From the application point of view, MD process has been demonstrated as an effective method to fabricate field‐effect transistors (FETs) based on single Si nanowires or to fabricate solar cells based on arrays of Si nanowires . It allows to form ultra‐shallow junctions sub‐10 nm deep, by the combination of the self‐limiting monolayer formation and the conventional rapid thermal annealing (RTA).…”

Section: Introductionmentioning

confidence: 99%

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

Puglisi

Caccamo

D’Urso

et al. 2015

Phys. Status Solidi A

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Semiconductor doping through solution-based self-assembling provides a simple, scalable, and cost-effective alternative to standard methods and additionally allows conformality on structured surfaces. Among the several solution-based deposition techniques, dip coating is the most promising. It consists in immersing the target to be doped inside a solution containing the dopant precursor. During this process, the molecule bonds to the target surface with a self-limiting process ruled by its steric properties. Successive annealing leads to layer decomposition and diffusion of dopant atoms inside the substrate. Most of the work on molecular doping lacks information on the molecule/Si interface chemical properties, on the mechanisms of the molecule evolution during the coating, and of its decomposition after the diffusion step. Moreover, it has so far been devoted to the molecules design to tune the final dopant dose and distribution. Here, the main results on the molecular doping are reviewed, and new findings on the interface characteristics, also in terms of monoand multilayers formation are presented. A systematic study, carried out by fixing the dopant precursor and varying the coating conditions, is also reported, demonstrating that the important doping features can be controlled precisely and that uniformity can be achieved at nanometer level.

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Section: Introductionmentioning

confidence: 99%

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

Puglisi

Caccamo

D’Urso

et al. 2015

Phys. Status Solidi A

Self Cite

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“…Notably, Puglisi and co-workers recently published a study where MLD-doped Si NWs integrated into complete solar cells exhibited higher short circuit currents and fill factors than planar reference cells. [28] CVDgrown i-SiNWs were immersed in a gold-cleaning solution to remove traces of the NW growth catalyst. Following a quick HF dip to remove surface oxides and provide the required Htermination, the NWs were immersed in a solution of diethyl 1-propylphosphonate (DEPP) and mesitylene (25%, v/v) at 160 °C for 2.5 h. Scanning electron microscopy (SEM) showed nanowires with an average length of 500 nm with transmission microscopy used to show diameter ranges between 2.5 and 70 nm.…”

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confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

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Access to the full text of the published version may require a subscription. after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium-and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. Rights3

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“…Whereas the applications of ML(C)D described above have focused on electronic devices, Puglisi et al used MLD for Si‐nanowire‐based solar cells . Here, doping can be used to create p–n junctions for solar‐light‐induced charge separation.…”

Section: Dopingmentioning

confidence: 99%

Applications of Monolayer‐Functionalized H‐Terminated Silicon Surfaces: A Review

Veerbeek

Huskens

2017

Small Methods

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Silicon is an attractive semiconductor material for wide‐ranging applications, from electronics and sensing to solar cells. Functionalization of H‐terminated silicon surfaces with molecular monolayers can be used to tune the properties of the material toward a desired application. Several applications require the removal of the, often insulating, silicon oxide between the silicon surface and a monolayer, thus precluding the more conventional silane‐based chemistry. Here, the applications of monolayer‐functionalized silicon surfaces are surveyed starting from H‐terminated silicon. The oxide‐free routes available for Si–C, Si–N, Si–O–C, and Si–S bond formation are described, of which the most commonly used techniques include hydrosilylation and a chlorination/alkylation route onto H‐terminated silicon. Applications are subdivided into the areas of surface passivation, electronics, doping, optics, biomedical devices, and sensors. Overall, these methods provide great prospects for the development of stabilized silicon micro‐/nanosystems with engineered functionalities.

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Molecular doping applied to Si nanowires array based solar cells

Cited by 41 publications

References 28 publications

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

Chemical approaches for doping nanodevice architectures

Applications of Monolayer‐Functionalized H‐Terminated Silicon Surfaces: A Review

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