“…4,[8][9][10] However, a high doping level in BHJ layers is oen undesired since the coulombic potential of dopant counterions can create additional traps and thereby diminish the long-range order of molecular packing, 11,12 which serves as a bottleneck to increasing electrical conductivity and preventing over-high dark carrier density. 13 In principle, n-or p-doping are both feasible in electron acceptors and donors, respectively, yet n-doping in OSCs is remarkably more challenging due to limited candidate dopants, mismatched energy levels and air instability. 4,8 Since the Zhan group pioneered the design of the rst nonfullerene acceptor (NFA), 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)dithieno[2,3-d:2 0 ,3 0 -d 0 ]-s-indaceno[1,2-b:5,6-b 0 ]dithiophene (ITIC), in 2015, recent years have witnessed unparalleled advances in NFAs and their OSCs (namely, NF-OSCs), thanks to their tunable electronic structures and strong optical absorption in the visible and near-infrared bands compared to fullerene acceptors.…”