The response of a membrane-bound Kv1.2 ion channel to an applied transmembrane potential has been studied using molecular dynamics simulations. Channel deactivation is shown to involve three intermediate states of the voltage sensor domain (VSD), and concomitant movement of helix S4 charges 10-15 Å along the bilayer normal; the latter being enabled by zipper-like sequential pairing of S4 basic residues with neighboring VSD acidic residues and membrane-lipid head groups. During the observed sequential transitions S4 basic residues pass through the recently discovered charge transfer center with its conserved phenylalanine residue, F 233 . Analysis indicates that the local electric field within the VSD is focused near the F 233 residue and that it remains essentially unaltered during the entire process. Overall, the present computations provide an atomistic description of VSD response to hyperpolarization, add support to the sliding helix model, and capture essential features inferred from a variety of recent experiments.gating charge | S4 helix | voltage-gated channel V oltage sensor domains (VSDs) are membrane-embedded constructs, which work as electrical devices responding to changes in the transmembrane (TM) voltage. They are ubiquitous to voltage-gated channels (VGCs) in which four of these units are attached to the main pore (1). During channel activation, the displacements of the charges tethered to the VSD give rise to transient "gating" currents, the time integral of which is the "gating charge" (GQR) translocated across the membrane capacitance. Phenomenological kinetic models devised to describe the time course of such currents are very diverse but all indicate that during VGC activation, the VSD undergoes a complex conformational change that encompasses many transitions (2-5).Three main models have been proposed to rationalize the transfer of a large GQR across the low dielectric membrane in VGCs (6, 7). All are associated with the motion of S4, the conserved highly positively charged helix of the VSDs (8). In the sliding helix model (9, 10), the positively charged (basic) residues of the S4 segment form sequential ion pairs with acidic residues on neighboring TM segments and move a large distance perpendicular to the membrane plane. The transporter model derives from measurements of a focused electrical field within the membrane and suggests that during activation, the latter is reshaped. Accordingly, it is posited that S4 does not move its charges physically very far across the membrane (8). A third model was introduced following publication of the KvAP structure (11). Here, the position of the S3-S4 helical hairpin with respect to the pore domain suggested a gating mechanism in which the hairpin moves through the membrane in a paddle-like motion translocating S4 basic residues across the membrane, and reaching a TM position only in the activated state. Crystal structures of the Kv1.2 channel (12) and the Kv1.2-Kv2.1 paddle chimera (13) indicated later that the KvAP structure likely represented a non...