Molecular dynamics simulations of ultrathin PMMA films

Zhang, Lili; Fleck, N.A.

doi:10.1016/j.polymer.2021.123748

Cited by 2 publications

(2 citation statements)

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“…However, in especially thin resists, modulus is a function of feature dimensions [4]. Experimental evidence shows that in thick films, Me ~ h 0 and in thin films (< 60 nm for our applications), Me ~ h -0.86 , where h is the film thickness [5][6]. Combining the experimental results with equation (1), we expect that the modulus will scale as follows:…”

Section: Non-constant Modulus Effectsmentioning

confidence: 80%

Improving OPC modeling accuracy with rigorous and compact modeling deformation effects in photoresists

Latinwo

Kuechler

DeLancey

et al. 2023

DTCO and Computational Patterning II

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The technological demands on the semiconductor industry continuously require shrinking feature critical dimensions (CDs) and improved feature CD control. To meet feature CD demands requires advances in DUV and EUV lithography as well as improvements in photoresists, including negative tone-development (NTD) and positive tonedevelopment (PTD), materials properties and processing. As an example, the semiconductor industry has benefited from significant improvements in 193nm lithographic resolution and process window with NTD photoresist (resist) patterning processes of trench and hole/via features. Consequently, optical proximity correction (OPC) compact modeling of NTD resists has needed to advance to accurately model the different chemical and physical material properties, including the deformation, of thin films. From a fundamental point of view, while the basic deformation and shrinkage behavior observed in NTD resists is captured by rigorous and compact simulators, there remains known complex phenomena, such as polymer entanglements, strain softening, and strain hardening, in the materials science community, that are not present in the current models applied in OPC. In this paper, we describe these phenomena and, where appropriate, their impact on compact and rigorous resist modeling. Finally, we discuss how these newly addressed deformation effects may improve overall OPC accuracy and therefore enable further feature CD reduction and control.

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Section: Non-constant Modulus Effectsmentioning

confidence: 80%

Improving OPC modeling accuracy with rigorous and compact modeling deformation effects in photoresists

Latinwo

Kuechler

DeLancey

et al. 2023

DTCO and Computational Patterning II

View full text Add to dashboard Cite

show abstract

“…However, due to the overlapping or hole phenomenon in the atomic distribution of the initial conguration of the polymer lm, such a model is usually in a highenergy state and cannot be used for subsequent nanoindentation simulations. Therefore, following previous work, 45,46 in LAMMPS an annealing process was used to eliminate the inhomogeneity of atomic distribution within the PMMA model. The annealing process was as follows: (1) virtual and rigid walls were inserted parallel to the X-Y plane on the upper and lower surfaces of the PMMA, where the distance between the upper and lower bounds in the Z-direction was the same as the initial thickness of the lm and remained unchanged.…”

Section: Potential Function and Model Setupmentioning

confidence: 99%