The
structural, mechanical, electrical, and optical properties
of new supertetrahedral structures cF-Ga4X (X = C, Si) were studied by using a solid state DFT calculation.
The crystal structures of cF-Ga4X are
built based on a diamond crystal lattice, in which pairs of adjacent
carbon atoms are replaced by Ga4X fragments, where Ga4 is a tetrahedron of gallium atoms. Calculations have shown
that new mixed-type supertetrahedral structures are dynamically stable,
have densities of 3.49 g/cm3 (X = C) and 2.65 g/cm3 (X = Si), and are narrow band gap semiconductors. From the
performed molecular dynamics calculations, it follows that the homogeneous
melting temperature of the gallium–carbon structure is in the
range from 600 to 700 K and that of the gallium–silicon structure
is in the range from 400 to 500 K.