Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes

Taguchi, Masafumi; Hamaguchi, Satoshi

doi:10.1063/1.2401651

Cited by 22 publications

(12 citation statements)

References 20 publications

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“…It is known that the native oxide at the Si bottom electrode of the pristine device is unstable owing to the ion bombardment effect by Ar plasma during the IGZO sputtering fabrication step. 56 As can be seen in Figure 4d, the Si−O peak at the bottom electrode is relatively high. This finding suggests that the bottom silicon oxide has a large Si dangling bond and that it is an insulating film.…”

Section: ■ Results and Discussionmentioning

confidence: 77%

One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

Jang

Kim

Choi

et al. 2020

ACS Appl. Electron. Mater.

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Various memristor-based synaptic devices have been proposed for implementing a neuromorphic system. However, memristor devices typically suffer from various inherent problems such as nonlinearity and asymmetry of conductance modulation and the sneak path issue of the crossbar array structure. To solve these drawbacks, we propose a one transistor–two memristor (1T2M) synaptic device, its array structure, and its operation method for neuromorphic system applications. For the channel of the transistor and switching layer of the memristor, amorphous InGaZnO was used. The proposed 1T2M synaptic device exhibited more linear and symmetric characteristics of conductance modulation compared with the single memristor device. In addition, the proposed array structure was robust to the sneak path problem. To investigate the switching mechanism, a depth profile analysis of X-ray photoelectron spectroscopy was conducted for each resistance state. Finally, we confirmed an excellent pattern recognition accuracy by using an artificial neural network simulation.

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Section: ■ Results and Discussionmentioning

confidence: 77%

One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

Jang

Kim

Choi

et al. 2020

ACS Appl. Electron. Mater.

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“…As mentioned earlier, this can be understood by seeing the tfMC simulation as conducting a random walk: each subsequent step is independent of the previous simulation steps. The timescale described by (6), however, assumes that the tfMC trajectory can be mapped onto a MD-like trajectory in which all steps are inherently correlated, contributing to one smooth trajectory. This assumption is closely tied to the suggestion of the tfMC authors that the method would be able to describe (approximate) system dynamics, which however cannot be achieved by a random walk.…”

Section: B Importance Ofmentioning

confidence: 99%

“…Indeed, it has been shown that the sequential application of MD and MMC allows an enhanced description of thin film growth, as evidenced by the higher quality of the obtained films that better match experimental results. [6][7][8][9] This comes at the cost of losing detailed information on the described physical timescale, of which only rough estimates are available. 8 Kikuchi et al 10,11 furthermore showed that MMC can be interpreted as a numerical solution of the Fokker-Planck equation and thus in principle has the ability to describe the true time evolution of Brownian diffusion processes.…”

Section: Introductionmentioning

confidence: 99%

On the time scale associated with Monte Carlo simulations

Bal

Neyts

2014

The Journal of Chemical Physics

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Uniform-acceptance force-bias Monte Carlo (fbMC) methods have been shown to be a powerful technique to access longer timescales in atomistic simulations allowing, for example, phase transitions and growth. Recently, a new fbMC method, the time-stamped force-bias Monte Carlo (tfMC) method, was derived with inclusion of an estimated effective timescale; this timescale, however, does not seem able to explain some of the successes the method. In this contribution, we therefore explicitly quantify the effective timescale tfMC is able to access for a variety of systems, namely a simple single-particle, one-dimensional model system, the Lennard-Jones liquid, an adatom on the Cu(100) surface, a silicon crystal with point defects and a highly defected graphene sheet, in order to gain new insights into the mechanisms by which tfMC operates. It is found that considerable boosts, up to three orders of magnitude compared to molecular dynamics, can be achieved for solid state systems by lowering of the apparent activation barrier of occurring processes, while not requiring any system-specific input or modifications of the method. We furthermore address the pitfalls of using the method as a replacement or complement of molecular dynamics simulations, its ability to explicitly describe correct dynamics and reaction mechanisms, and the association of timescales to MC simulations in general.

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“…17) and SiO 2 . 19 It has been shown that the higher the mass of the sputtered species, the lower will be its kinetic energy (size effect). 19 It has been shown that the higher the mass of the sputtered species, the lower will be its kinetic energy (size effect).…”

Section: The Model and Simulation Proceduresmentioning

confidence: 99%

Atomistic simulations of Au-silica nanocomposite film growth

Khan

Heinig

Avasthi

2011

Journal of Applied Physics

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Thermal tweezers for nano-manipulation and trapping of interacting atoms or nanoparticles on crystalline surfaces J. Chem. Phys. 137, 114701 (2012) Thermal conductance at atomically clean and disordered silicon/aluminum interfaces: A molecular dynamics simulation study J. Appl. Phys. 112, 054305 (2012) Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy AIP Advances 2, 032150 (2012) Effect of adatom surface diffusivity on microstructure and intrinsic stress evolutions during Ag film growthThe growth of Au-silica nanocomposite film is simulated in the framework of kinetic three dimensional lattice Monte Carlo simulations considering the basic phenomena in the deposition process. In case of co-sputter deposition, the growth kinetics of nanoparticles has been studied taking into consideration the effect of the energetic sputtered species reaching the surface of the film during deposition. Formation of Au nanorod like structures are predicted under certain growth conditions particularly when surface diffusion assisted phase separation plays the dominant role and bulk kinetics is frozen. The observed dependence of the Au nanoparticle size on Au/silica ratio is in agreement with the experimental results.

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Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes

Cited by 22 publications

References 20 publications

One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

On the time scale associated with Monte Carlo simulations

Atomistic simulations of Au-silica nanocomposite film growth

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