Molecular Electronics: Redox‐Induced Asymmetric Electrical Characteristics of Ferrocene‐Alkanethiolate Molecular Devices on Rigid and Flexible Substrates (Adv. Funct. Mater. 17/2014)

Abstract

The electrical properties of ferrocene‐alkanethiolate molecular devices on both rigid and flexible substrates are studied on page 2472 by D. Xiang, T. Lee, and team. A distinctive temperature dependence of the current (i.e., a decrease in current as temperature increases) upon an applied bias polarity is observed, which is associated with the redox of ferrocene groups in the junctions. The flexible molecular devices function consistently under various mechanical stress configurations.

Pressure-Induced High-κ Dielectric Properties and Multiple Phase Transitions between Novel Nonperovskite and Perovskite Phases in LiSbO3: A First-Principles Study

“…Owing to their rich innate properties, e.g., pyroelectricity, ferroelectric, piezoelectric, and dielectric, ABO 3 -type perovskite oxides are vital circuit elements for many electronic materials such as high-κ materials. − High-κ materials with higher permittivity and low loss have been attractive for application in capacitors, energy storage, memories, and so on. − Two kinds of ABO 3 -type perovskite are widely found in various bulk materials as well as films: LiNbO 3 -type (abbreviated as LN-type, with R 3 c symmetry) and GdFeO 3 -type perovskite oxides (with a space group Pnma ). The former possesses large spontaneous polarization (about 100 mC/m 2 ), and some have excellent electro-optic and nonlinear optic effects. − The latter appears in various ceramic materials and even can induce magnetoelectric response in some antiferromagnetic systems …”