Molecular glass photoresists for advanced lithography

Yang, Da; Chang, Shi; Ober, Christopher K.

doi:10.1039/b514146j

Cited by 85 publications

(82 citation statements)

References 35 publications

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“…[ 90 ] In general the molecular glass resist has a well-defi ned small-molecule core that bears protected base-soluble groups (such as hydroxyls and carboxyls) as shown in Figure 21b . With this approach the core chemistry can vary from calix [4]resorcinarenes (ringlike), [91][92][93] branched phenolic groups, [ 94,95 ] and hexaphenolic groups (disklike). [ 96,97 ] Early approaches with molecular resists led to low glass-transition temperatures, however, such problems were resolved by increased hydrogen bonding functionality and the design of the core structure.…”

Section: Advances By Materials Structurementioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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Photoresist materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes. As next-generation light sources are developed, using extreme ultraviolet light of wavelength 13.5 nm, these highly tuned formulations must meet strict image-fidelity criteria to maintain the expected performance gains from decreases in feature size. However, polymer photoresists appear to be reaching resolution limits and advancements in measurements of the in situ formed solid/solid and solid/liquid interface is necessary. This Review focuses on the chemical and physical structure of chemically amplified photoresists at the lithographic feature edge at length scales between 1 nm and 100 nm. Neutron reflectivity measurements provide insight into the nanometer-scale composition profiling of the chemical latent image at an ideal lithographic line-edge that separates optical resolution effects from materials processing effects. Four generations of advanced photoresist formulations were examined over the course of seven years to quantify photoresist/photoacid and photoresist/developer interactions on the fidelity of lithographic features. The outcome of these measurements complement traditional resist design criteria by providing the effects of the impacts of the photoresist and processing on the feature fidelity. These physical relations are also described in the context of novel resist architectures under consideration for next-generation photolithography with extreme-ultraviolet radiation.

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Section: Advances By Materials Structurementioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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“…These properties, however, have been found to be inversely related, a relationship commonly referred to as the RLS trade-off [1]. To overcome the RLS trade-off, the lithographic community is investigating alternative resist platforms such as molecular glasses [2][3][4], polymer-bound photoacid generators (PAGs) [5][6][7], and chain-scission polymers [8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Chain-Scission Polyethers for EUV Lithography

Cardineau

Garczynski

Earley

et al. 2013

J. Photopol. Sci. Technol.

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This paper describes the synthesis of acid-catalyzed chain-scission polymers and the lithographic results of these polymers in extreme ultraviolet (EUV) resist formulations. These platforms incorporate acid-catalyzed cleavable groups into the polymer backbone. Upon exposure to EUV light and bake, the polymer is transformed from high to low molecular weight segments in the exposed regions. Two polymers were made into resist formulations and tested at Lawrence Berkeley National Laboratories. One of these resists appeared to have highresolution capabilities with modulation down to 14 nm h/p lines.

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“…The resulting cross-linked oligomers are insoluble in aqueous base, thus providing the solubility switch required for development. This system is capable of producing 60 nm line/space patterns (Yang et al, 2006). (2), and photoacid generator (3) (Yang et al, 2006).…”

Section: Molecular Glass Photoresistsmentioning

confidence: 99%

“…This system is capable of producing 60 nm line/space patterns (Yang et al, 2006). (2), and photoacid generator (3) (Yang et al, 2006).…”

Section: Molecular Glass Photoresistsmentioning

confidence: 99%