Molecular-ink route to 13.0% efficient low-bandgap CuIn(S,Se)<sub>2</sub> and 14.7% efficient Cu(In,Ga)(S,Se)<sub>2</sub> solar cells

Uhl, Alexander R.; Katahara, John K.; Hillhouse, Hugh W.

doi:10.1039/c5ee02870a

Cited by 131 publications

(146 citation statements)

References 32 publications

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“…31,32,35,38 The used chalcogenide cells exhibited PCEs of 14.3% for CIGS and 13.0% for low-bandgap CIS absorbers, which is the highest reported PCE for a solution-processed solar cell with a bandgap of 1.0 eV. 39 When we measured the performance of our chalcogenide devices with the above described perovskite filters, reducing the irradiance and the UV-and visible portion of the light, the current density and efficiency (uncorrected for reduced irradiance) dropped roughly to a third due to the 31-37% total transmission of the perovskites filters. As expected from our previous experiments with ND and LP filters, the Voc decreased logarithmically with irradiance while the FF declined just marginally for these cells.…”

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confidence: 87%

“…The bottom cells are low-bandgap CIGS (1.0 to 1.2 eV) formed from molecular-inks with non-toxic solvent dimethyl sulfoxide (DMSO). 39 The top cells are optically NIRtransparent solution-processed lead halide based perovskite cells with bandgaps from 1.5 -1.7 eV. 40 We show device results for mechanically-stacked two-and four-terminal configurations with stabilized AM1.5 power conversion efficiencies of up to 18.5% and 18.8%, respectively.…”

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confidence: 99%

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Solution-processed chalcopyrite–perovskite tandem solar cells in bandgap-matched two- and four-terminal architectures

et al. 2017

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confidence: 87%

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confidence: 99%

Solution-processed chalcopyrite–perovskite tandem solar cells in bandgap-matched two- and four-terminal architectures

et al. 2017

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“…9 Fabrication of CIS solar cells from aqueous 10 as well as non aqueous electrolyte 11 is also reported. There are many challenging opportunities in optimizing thin film properties by using graded band-gap 12 and nanoparticles based 13 absorber layers. Post-deposition treatments such as surface etching and annealing are needed to improve the performance of solar cells.…”

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confidence: 99%

“…The derivative dV/dJ against 1/J and dV/dJ against 1/(J+J SC ) for, R s G<<1 plotted to dark and illuminated condition using Equation 13) is shown in inset of Figures 14a, 14c and 14b, 14d, respectively.…”

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confidence: 99%

Rapid Thermal Processed CuInSe₂Layers Prepared by Electrochemical Route for Photovoltaic Applications

Rohom

Londhe

Chaure

2017

J. Electrochem. Soc.

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Impact of rapid thermal (RT) annealing and normal selenization process on the properties of CuInSe 2 (CIS) layers prepared by electrochemical route is reported. Cyclic voltammetric measurement was carried out to optimize the co-deposition potentials. A range of characterization techniques were employed to study the properties. Three prominent reflections(112),(204/220) and (312/116) of tetragonal CIS were exhibited in as-deposited CIS layers. Upon selenization, the crystallinity was found to be improved. Uniform, compact, densely packed surface morphology was observed in as-prepared sample. Large grains are developed upon RT annealing due to recrystallization. Elemental composition obtained by EDAX confirms the growth of stoichiometric layers. Photo-electrochemical study demonstrates the p-type conductivity. Current-voltage, capacitance-voltage, electrochemical impedance spectroscopy were conducted to investigate the influence of the grain size and crystallinity on electrical properties. Energy band-gap estimated from absorption spectra were 1.18, 1.04 and 0.98 eV for as-deposited, selenized, RT annealed samples, respectively. X-ray Photoelectron spectroscopy confirms the presence of Cu + , In 3+ and Se 2− oxidation states in all CIS layers. Power conversion efficiency of 3.05% and 5.94% were achieved for selenized and RT annealed samples, respectively. The improved efficiency measured for RT annealed sample is proposed due to the growth of highly crystalline, large grain and compact surface morphology. Considering the energy crisis, solar energyhasemerged as an important non-conventional energy source. Various direct bandgap, high optical absorption coefficient materials have been used toward the fabrication of thin film solar cells. CuInSe 2 (CIS) is one of the intensively studied active absorber materials in solar cells because of its direct bandgap ∼1.05 eV, high absorption coefficient, large mean free pathand long diffusion length of minority carriers.1,2 Furthermore, the energy gap can be increased upon addition of gallium and/or sulfurization in controlled ambient. Device efficiency over 22% has been achieved for CIGS based thin film solar cells using co-evaporation method.3 However, in spite of high efficiency the high production cost is one of thesevere obstacles. Various reports are available in the literature on the development of CIS solar cells using vacuum 4 and non-vacuum processes.5 Electrochemical technique has been used for the preparation of CIS based solar cells.6 A low-cost electrochemical technique is widely used for the growth of metal oxide, insulator and semiconductor thin films because of higher growth rate, deposition over arbitrary shaped surface, possibility to grow highly crystalline and controlled stoichiometric alloy thin films. The best reported CIGS solar cells produced via this technique have measured 15.4% efficiency by Bhattacharya et al. 7 in conjunction with PVD method. Electrodeposition of CIS thin films can be performed either by one-step 8 or two-step approach. 9 Fabri...

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“…Según Shockley y Queisser, el límite de eficiencia teórico para un dispositivo fotovoltaico (límite Shockley-Queisser) con monounión p-n para un espectro solar con un coeficiente "air mass" AM1.5 se encuentra situado en 33,7% [23,24]. [27,28].…”

Section: Band Gapunclassified

Obtención de estructuras calcopirita (CIGS) y kesterita (CZTS) como absorbentes para dispositivos fotovoltaicos de capa fina mediante métodos de síntesis de bajo coste

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Molecular-ink route to 13.0% efficient low-bandgap CuIn(S,Se)₂ and 14.7% efficient Cu(In,Ga)(S,Se)₂ solar cells

Cited by 131 publications

References 32 publications

Solution-processed chalcopyrite–perovskite tandem solar cells in bandgap-matched two- and four-terminal architectures

Solution-processed chalcopyrite–perovskite tandem solar cells in bandgap-matched two- and four-terminal architectures

Rapid Thermal Processed CuInSe₂Layers Prepared by Electrochemical Route for Photovoltaic Applications

Obtención de estructuras calcopirita (CIGS) y kesterita (CZTS) como absorbentes para dispositivos fotovoltaicos de capa fina mediante métodos de síntesis de bajo coste

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Molecular-ink route to 13.0% efficient low-bandgap CuIn(S,Se)2 and 14.7% efficient Cu(In,Ga)(S,Se)2 solar cells

Cited by 131 publications

References 32 publications

Solution-processed chalcopyrite–perovskite tandem solar cells in bandgap-matched two- and four-terminal architectures

Solution-processed chalcopyrite–perovskite tandem solar cells in bandgap-matched two- and four-terminal architectures

Rapid Thermal Processed CuInSe2Layers Prepared by Electrochemical Route for Photovoltaic Applications

Obtención de estructuras calcopirita (CIGS) y kesterita (CZTS) como absorbentes para dispositivos fotovoltaicos de capa fina mediante métodos de síntesis de bajo coste

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Molecular-ink route to 13.0% efficient low-bandgap CuIn(S,Se)₂ and 14.7% efficient Cu(In,Ga)(S,Se)₂ solar cells

Rapid Thermal Processed CuInSe₂Layers Prepared by Electrochemical Route for Photovoltaic Applications