2015
DOI: 10.1039/c4nr06356b
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Molecular interfaces for plasmonic hot electron photovoltaics

Abstract: The use of self-assembled monolayers (SAMs)

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Cited by 33 publications
(31 citation statements)
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“…In addition, a better understanding of the hot carrier relaxation timescale [75,117,[159][160][161] in various materials as well as the transport dynamics in nanostructures would provide more valuable information for designing plasmonic devices with efficient hot carrier transport to the Schottky interface. Lastly, engineering the metal-semiconductor interface on the atomic level could also lead to improved hot electron transfer efficiencies [157,162]. For A B instance, a recent report describing hot electron transfer by a plasmon-induced interfacial charge-transfer transition has shown an internal quantum efficiency up to 20% independent of incident photon energy [157].…”
Section: -156mentioning
confidence: 99%
“…In addition, a better understanding of the hot carrier relaxation timescale [75,117,[159][160][161] in various materials as well as the transport dynamics in nanostructures would provide more valuable information for designing plasmonic devices with efficient hot carrier transport to the Schottky interface. Lastly, engineering the metal-semiconductor interface on the atomic level could also lead to improved hot electron transfer efficiencies [157,162]. For A B instance, a recent report describing hot electron transfer by a plasmon-induced interfacial charge-transfer transition has shown an internal quantum efficiency up to 20% independent of incident photon energy [157].…”
Section: -156mentioning
confidence: 99%
“…In the work presented here we theoretically explore the use of a metal-insulator-semiconductor (MIS) hererostructures for plasmonic hot-electron photodiodes and solar cells. This architecture has already been successfully employed in plasmonic hot-electron solar cells, where the main role of the insulating layer was the passivation of detrimental semiconductor midgap states that hinder the photovoltaic response of otherwise MS diodes [15,18]. Here we show that, on top of this, the insulating layer can be used to increase the performance of plasmonic solar cells by means of dark current reduction, and as leverage for device design for a given choice of metal-semiconductor.…”
Section: Introductionmentioning
confidence: 94%
“…Also very important is, in the case of realistic interfaces, the presence of surface states that result in Fermi level pinning and Ф b reduction [15,18]. Therefore, it is important to find alternatives to the MS architecture for more efficient plasmonic hot-electron photovoltaic devices.…”
Section: Metal-semiconductor Structurementioning
confidence: 99%
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