Molecular layer deposition of indicone and organic-inorganic hybrid thin films as flexible transparent conductor

Lee, Seung Hwan; Baek, Geon Ho; Lee, Jung Hoon; Van, Tran Thi Ngoc; Ansari, Abu Saad; Shong, Bonggeun; Park, Jin‐Seong

doi:10.1016/j.apsusc.2020.146383

Cited by 23 publications

(26 citation statements)

References 51 publications

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“…Therefore, graphitic carbon, which consists of structural defects and HC bonding, is generated after the annealing process. On the contrary signatures of the remaining ethyl ligands and the aromatic HQ moieties were observed, in the FTIR spectra for the as-deposited indicone and all become hardly detectable upon annealing (Figure S2), indicating a disappearance of the functional groups upon annealing.…”

Section: Resultsmentioning

confidence: 99%

“…DFT calculations were performed to gain a further understanding of the mechanistic details of the thermal decomposition of the indicone film, especially regarding the loss of indium. Since some of the ethyl ligands of the INCA-1 precursor are expected to remain in the film, In(C 2 H 5 ) 2 (OPhOH) and In(C 2 H 5 )(OPhOH) 2 (Ph = C 6 H 4 ) are used as molecular models of the indicone polymer. Potentially viable thermal decomposition reactions of indicone are presented in the following eqs (Figure c–e, respectively): …”

Section: Resultsmentioning

confidence: 99%

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Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition

Lee

Baek

Kim

et al. 2020

ACS Appl. Mater. Interfaces

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Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale patterning, which may overcome the drawbacks of conventional top-down approaches for the fabrication of future electronic devices. However, conventional materials and processes often employed for AS-ALD are inadequate for conformal and rapid processing. We introduce a new strategy for AS-ALD based on molecular layer deposition (MLD) that is compatible with large-scale manufacturing. Conformal thin films of "indicone" (indium alkoxide polymer) are fabricated by MLD using INCA-1 (bis(trimethylsily)amidodiethylindium) and HQ (hydroquinone). Then, the MLD indicone films are annealed by a thermal heat treatment under vacuum. The properties of the indicone thin films with different annealing temperatures were measured with multiple optical, physical, and chemical techniques. Interestingly, a nearly complete removal of indium from the film was observed upon annealing to ca. 450 °C and above. The chemical mechanism of the thermal transformation of the indicone film was investigated by density functional theory calculations. Then, the annealed indicone thin films were applied as an inhibiting layer for the subsequent ALD of ZnO, where the deposition of approximately 20 ALD cycles (equivalent to a thickness of approximately 4 nm) of ZnO was successfully inhibited. Finally, patterns of annealed MLD indicone/Si substrates were created on which the area-selective deposition of ZnO was demonstrated.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition

Lee

Baek

Kim

et al. 2020

ACS Appl. Mater. Interfaces

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“…[369,422,423] The as-deposited In-HQ films showed a structural change upon exposure to ambient air and were found promising as flexible transparent films. [424] Tin-based hybrid Figure 9. GPC values at different deposition temperatures for four different 3d transition metal-BDC processes; data depicted from refs.…”

Section: D-and 5d-transition-metal-based Processesmentioning

confidence: 99%

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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organic ligands act as bridges between the metal centers to form infinite 1D, 2D, or 3D structures. These materials are often referred to as coordination polymer (CP) [1] or metal-organic framework (MOF) [2] materials; the latter term is used when the metal-organic material is crystalline and highly porous. [3] The research field of CP-and MOF-type materials has grown tremendously over the last two decades. The structural and chemical diversity of these materials has served as a continuous source of scientific excitement; the same diversity has also triggered huge technological interest as these materials possess enormous potential to be tailored for a wide variety of applications ranging from gas capture, storage, and separation to sensing, catalysis, optics, electronics, and energy storage. [4][5][6][7] Most of the targeted application breakthroughs of metal-organics require that these materials can be produced as highquality thin films and coatings, which can be integrated with the other components in the actual device configuration. The possibility to deposit such thin films in an industry-feasible manner on the substrate types needed, would be a major step forward in the field. [8] Traditionally, solvent-based processes such as liquid-phase epitaxy, Langmuir-Blodgett, layer-by-layer, and electrochemical deposition techniques have been used for metal-organic thin films. [9][10][11] These are, however, incompatible with the requirements set by the possible integration of the materials in microelectronics. This is due to corrosion and contamination risks, and the problems in patterning and precise deposition on high-aspect-ratio features. Hence, it is vital to develop solventfree thin-film deposition routes for the metal-organic material family. In the optimal case, these deposition methods should allow conformal coatings on large-area and high-aspect-ratio substrates.The currently strongly emerging ALD/MLD technique is uniquely suited to address the challenge in a scientifically elegant yet industrially feasible way. This technique is derived from the two parent gas-phase thin-film techniques: ALD for inorganic materials (mostly binary metal oxides, sulfides, and nitrides), [12][13][14] and its counterpart MLD for purely organic thin films (e.g., polyimides and polyamides). [15] In both cases, the attractive film growth characteristics are derived from the unique way of separating the different precursor gas pulses. Currently, ALD is the standard thin-film technology in many Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali...

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“…Table 2 summarizes the theoretical-study-only ALD articles found in the Web of Science and covered in this review. It is worth mentioning that this review mostly focuses on the theoretical-study-only ALD articles and does not cover the combined experimental and theoretical ones, which are cited here [ 75 , 76 , 130 , 131 , 132 , 133 , 134 , 135 , 136 , 137 , 138 , 139 , 140 , 141 , 142 , 143 , 144 , 145 , 146 , 147 , 148 , 149 , 150 , 151 , 152 , 153 , 154 , 155 , 156 ]. Figure 5 displays the publications, summarized in Table 2 , that are covered in this study.…”

Section: Theoretical Studies On Aldmentioning

confidence: 99%

Recent Advances in Theoretical Development of Thermal Atomic Layer Deposition: A Review

et al. 2022

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Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted increasing attention from both experimentalists and theoreticians in the last few decades. ALD is well-known to produce conformal, uniform, and pinhole-free thin films across the surface of substrates. Due to these advantages, ALD has found many engineering and biomedical applications. However, drawbacks of ALD should be considered. For example, the reaction mechanisms cannot be thoroughly understood through experiments. Moreover, ALD conditions such as materials, pulse and purge durations, and temperature should be optimized for every experiment. It is practically impossible to perform many experiments to find materials and deposition conditions that achieve a thin film with desired applications. Additionally, only existing materials can be tested experimentally, which are often expensive and hazardous, and their use should be minimized. To overcome ALD limitations, theoretical methods are beneficial and essential complements to experimental data. Recently, theoretical approaches have been reported to model, predict, and optimize different ALD aspects, such as materials, mechanisms, and deposition characteristics. Those methods can be validated using a different theoretical approach or a few knowledge-based experiments. This review focuses on recent computational advances in thermal ALD and discusses how theoretical methods can make experiments more efficient.

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Molecular layer deposition of indicone and organic-inorganic hybrid thin films as flexible transparent conductor

Cited by 23 publications

References 51 publications

Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition

Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Recent Advances in Theoretical Development of Thermal Atomic Layer Deposition: A Review

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