Molecular layer deposition of photoactive metal-naphthalene hybrid thin films

Rogowska, M.; Hansen, Per-Anders; Sønsteby, Henrik Hovde; Dziadkowiec, Joanna; Valen, Håkon; Nilsen, Ola

doi:10.1039/d1dt02201f

Cited by 10 publications

(15 citation statements)

References 52 publications

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“…[117,229] For titanium, the most common precursor is TiCl 4 , extensively used with EG, [179,293,[391][392][393][394][395][396][397][398][399][400] and other orga nics. [46,49,105,112,122,211,230,232,235,248,254,255,336,378,390,[401][402][403][404][405][406][407][408] For example, the combination, TiCl 4 plus maleic anhydride has been utilized to deposit thin films with biologic synaptic functions. [401] Besides the TiCl 4 precursor, also titanium tetra-isopropoxide [45,135,136,210,217,227,265,351,409] and tetrakis(dimethylamido) titanium [112] precursors have be...…”

Section: Aluminum- Zinc- and Titanium-based Processesmentioning

confidence: 99%

Section: D-and 5d-transition-metal-based Processesmentioning

confidence: 99%

“…Zirconium-based ALD/MLD films have been deposited from ZrCl 4 , [106,122,204,224,416] and also from tetrakis(dimethylamido) (TDMA)- [65] and tetra-tert-butoxide (ZTB)- [126,230,[417][418][419] based precursors together with a variety of different organic precursors. Likewise, Hf-based films have been deposited from TDMAH, [230,262,324,420] HfCl 4 , [122] and TEMAH [367] together with various organics. In the few additional studies involving the 4d or 5d transition metals, Nb-based films have been deposited from Nb(OEt) 5 in combination with HQ, [421] Mo-based films from molybdenum hexacarbonyl together with 1,2-ethanedithiol (EDT), [242,243] 1,4-butanedithiol, and BDT, [243] and In-based films from bis(trimethylsilyl)amidodiethylindium (INCA-1) and HQ.…”

Section: D-and 5d-transition-metal-based Processesmentioning

confidence: 99%

“…[208] Regarding the organic component, only aromatic organic precursors have been employed in combination with the rare earth elements, one of the motivations being the possibility to find UV and/or visible light absorbing organic molecules as sensitizers of the characteristic luminescence of the different R ion species. For example, Y(thd) 3 has been combined with 2,3-pyrazinedicarboxylic acid (2,3-PZD), [214] 2,6-NDC, [122] 1,4-NDC, BDC, 9,10-anthracenedicarboxylic acid (ADA), [266] and La(thd) 3 with BDC, [129] uracil and adenine, [58] and Eu(thd) 3 with BDC, [57,266] 3,5-PDC, [57,428] 2,6-PDC, [57] 1,4-NDC, [266] ADA, [266] and 2-amino-1,4-BDC, [429] and Er(thd) 3 or Er(DPDMG) with 2,3-PZD, [214] 3,5-PDC, [208] and 2 [259] Different pyridine-based organic precursors yield strong bonds via N and O donor atoms with the large R 3+ ions acting as hard acids such that the resultant hybrids usually are thermally stable and exhibit intense photoluminescence. Different nucleobases have been considered attractive building blocks for luminescent nanostructures for many advanced applications, such as sensors and organic light emitting diodes.…”

Section: Rare-earth-element-based Processesmentioning

confidence: 99%

“…[ 31,32,39–44,176,181–200 ] In recent years, the organic precursor library has been rapidly expanding. We have collected in Table 1 the organic precursors so far used in ALD/MLD processes, together with the heating temperatures employed for their evaporation in the corresponding process conditions; [ 17,18,32,40,46,51,57–59,61,63,64,66,81,105–108,114,118,119,121,122,125,129,134–136,139,141,142,156,164,168,189,201–284 ...…”

Section: Organic Precursors In Ald/mldmentioning

confidence: 99%

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Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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organic ligands act as bridges between the metal centers to form infinite 1D, 2D, or 3D structures. These materials are often referred to as coordination polymer (CP) [1] or metal-organic framework (MOF) [2] materials; the latter term is used when the metal-organic material is crystalline and highly porous. [3] The research field of CP-and MOF-type materials has grown tremendously over the last two decades. The structural and chemical diversity of these materials has served as a continuous source of scientific excitement; the same diversity has also triggered huge technological interest as these materials possess enormous potential to be tailored for a wide variety of applications ranging from gas capture, storage, and separation to sensing, catalysis, optics, electronics, and energy storage. [4][5][6][7] Most of the targeted application breakthroughs of metal-organics require that these materials can be produced as highquality thin films and coatings, which can be integrated with the other components in the actual device configuration. The possibility to deposit such thin films in an industry-feasible manner on the substrate types needed, would be a major step forward in the field. [8] Traditionally, solvent-based processes such as liquid-phase epitaxy, Langmuir-Blodgett, layer-by-layer, and electrochemical deposition techniques have been used for metal-organic thin films. [9][10][11] These are, however, incompatible with the requirements set by the possible integration of the materials in microelectronics. This is due to corrosion and contamination risks, and the problems in patterning and precise deposition on high-aspect-ratio features. Hence, it is vital to develop solventfree thin-film deposition routes for the metal-organic material family. In the optimal case, these deposition methods should allow conformal coatings on large-area and high-aspect-ratio substrates.The currently strongly emerging ALD/MLD technique is uniquely suited to address the challenge in a scientifically elegant yet industrially feasible way. This technique is derived from the two parent gas-phase thin-film techniques: ALD for inorganic materials (mostly binary metal oxides, sulfides, and nitrides), [12][13][14] and its counterpart MLD for purely organic thin films (e.g., polyimides and polyamides). [15] In both cases, the attractive film growth characteristics are derived from the unique way of separating the different precursor gas pulses. Currently, ALD is the standard thin-film technology in many Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali...

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Section: Aluminum- Zinc- and Titanium-based Processesmentioning

confidence: 99%

Section: D-and 5d-transition-metal-based Processesmentioning

confidence: 99%

Section: D-and 5d-transition-metal-based Processesmentioning

confidence: 99%

Section: Rare-earth-element-based Processesmentioning

confidence: 99%

Section: Organic Precursors In Ald/mldmentioning

confidence: 99%

See 3 more Smart Citations

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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Vapor‐phase synthesis of MOF films

Choe,

Lee,

Choi

2024

Bulletin Korean Chem Soc

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Fabrication of thin films is the most crucial step in introducing promising new materials into practical devices. Among the various materials, metal–organic framework (MOF) thin films have gained widespread attention with the advantage of diverse applications. In this review, two representative vapor‐phase synthetic methods, (1) molecular layer deposition (MLD), (2) chemical vapor deposition (CVD) are addressed as emerging techniques.

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Conformal Zn‐Benzene Dithiol Thin Films for Temperature‐Sensitive Electronics Grown via Industry‐Feasible Atomic/Molecular Layer Deposition Technique

Philip,

Jussila,

Obenlüneschloß

et al. 2024

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The atomic/molecular layer deposition (ALD/MLD) technique combining both inorganic and organic precursors is strongly emerging as a unique tool to design exciting new functional metal‐organic thin‐film materials. Here, this method is demonstrated to work even at low deposition temperatures and can produce highly stable and conformal thin films, fulfilling the indispensable prerequisites of today's 3D microelectronics and other potential industrial applications. This new ALD/MLD process is developed for Zn‐organic thin films grown from non‐pyrophoric bis‐3‐(N,N‐dimethylamino)propyl zinc [Zn(DMP)2] and 1,4‐benzene dithiol (BDT) precursors. This process yields air‐stable Zn‐BDT films with appreciably high growth per cycle (GPC) of 4.5 Å at 60 °C. The Zn/S ratio is determined at 0.5 with Rutherford backscattering spectrometry (RBS), in line with the anticipated (Zn─S─C6H6─S─)n bonding scheme. The high degree of conformality is shown using lateral high‐aspect‐ratio (LHAR) test substrates; scanning electron microscopy (SEM) analysis shows that the film penetration depth (PD) into the LHAR structure with cavity height of 500 nm is over 200 µm (i.e., aspect‐ratio of 400). It is anticipated that the electrically insulating metal‐organic Zn‐BDT thin films grown via the solvent‐free ALD/MLD technique, can be excellent barrier layers for temperature‐sensitive and flexible electronic devices.

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Molecular layer deposition of photoactive metal-naphthalene hybrid thin films

Abstract: A series of organic–inorganic hybrid thin films with different d0-metals (Y, Ti, Zr and Hf) and 2,6-naphthalenedicarboxylic acid were prepared by molecular layer deposition (MLD) and their optical properties were explored.

Cited by 10 publications

References 52 publications

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Vapor‐phase synthesis of MOF films

Conformal Zn‐Benzene Dithiol Thin Films for Temperature‐Sensitive Electronics Grown via Industry‐Feasible Atomic/Molecular Layer Deposition Technique

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