Molecular orbital ordering in titania and the associated semiconducting behavior

Abstract

Electrical and optical properties of Nb-doped TiO 2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO 2 − x ceramic targets J. Vac. Sci. Technol. A 28, 851 (2010); 10.1116/1.3358153Studies on the room temperature growth of nanoanatase phase Ti O 2 thin films by pulsed dc magnetron with oxygen as sputter gas Influence of working gas pressure on structure and properties of WO 3 films reactively deposited by rf magnetron sputtering J.

Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

“…2. This is the most plausible origin of resistivity in terms of modification to the conduction band, because the energy difference of conduction band offset can be directly correlated to the probability of electron transfer from occupied states to unoccupied states in the conduction band [18,19].…”

The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties

“…9 In a previous study by the present authors, TiO x films were formed in the amorphous phase or in one of its crystalline polymorphs, namely, anatase or rutile. 10 It was shown to exhibit n-type semiconducting characteristics according to post annealing process. Generally, oxygen deficient states are very important to generate free electrons.…”

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

“…Actually, the Si 4+ ions incorporated in the ZTO matrix do not generate carriers in the SZTO, because the Si 4+ ions substituted into the Sn 4+ ion sites may work as oxygen binders for oxygen out-diffusion, thereby suppressing the formation of oxygen vacancies. This oxygen-related defect model has usually been explained as the electron charge trapping mechanism in oxide TFTs4344. The carrier transport is governed by percolation conduction over trap states and is enhanced at high carrier concentrations by filling the trap states.…”