Molecular Orientation‐Dependent Bias Stress Stability in Bottom‐Gate Organic Transistors Based on an <i>n</i>‐Type Semiconducting Polymer

Kang, Boseok; Moon, Byungho; Choi, Hyun Ho; Song, Eunjoo; Cho, Kilwon

doi:10.1002/aelm.201500380

Cited by 19 publications

(20 citation statements)

References 54 publications

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“…[7] With the development of P(NDI2OD-T2) -representing a milestone in the development of high performance electron conducting (i.e. n-channel) polymeric OFETs [6,8] extensive research has focused on understanding charge transport phenomena in NDI/thiophene-based donor/acceptor polymers in connection with thin-film microstructure, [9][10][11][12] molecular structure, [12][13][14] regioregularity, [15,16] molecular weight (MW), [17,18] side-chain engineering, [19,20] processing parameters, [21] annealing conditions, [22,23] high/low-k dielectrics, [24] ambipolarity, [25,26] contact resistance [27] as well as environmental stability. [28,29] As P(NDI2OD-T2)-based OFETs can be processed from a range of organic solvents, an equally important parameter is the nature of chain aggregation in solution, which is known to have a profound effect on thin-film microstructure properties.…”

Section: Introductionmentioning

confidence: 99%

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors

Nahid

Welford

Gann

et al. 2018

Adv Elect Materials

169

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Here the effect of solvent quality on the microstructure and organic field-effect transistor (OFET) performance of thin films of the high mobility naphthalene-diimide-thiophene based n-type semiconducting copolymer P(NDI2OD-T2) is investigated. A strong correlation between OFET mobility and solvent quality is observed with average electron mobility increasing from 0.21 cm 2 /Vs for samples prepared from tolerably-good solvents to 0.56 cm 2 /Vs for samples prepared from poor solvents, with a maximum electron mobility of 1.5 cm 2 /Vs observed for transistors processed from toluene. The variation in transistor performance with solvent quality is linked to the nature and extent of the solution aggregation of P(NDI2OD-T2) chains. Small angle X-ray scattering measurements reveal elongated rod-like aggregates up to 300 nm in length in solutions prepared using poor solvents, in contrast to more coil-like chains with radius of gyration of ~ 10 to 15 nm for solutions based on good to tolerably-poor solvents. Thin films produced from decreasing solvent quality show an increase in the extent of correlated ordering of backbones and the degree edge-on orientation of polymer chains at the air/film interface. This work establishes the important link between solution-phase chain aggregation behavior, thin-film microstructure and transistor performance in the P(DNI2OD-T2) system.

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Section: Introductionmentioning

confidence: 99%

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors

Nahid

Welford

Gann

et al. 2018

Adv Elect Materials

169

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“…The development of P(NDI2OD‐T2) also represented a milestone in the development of high‐performance electron conducting (i.e., n‐channel) polymeric OFETs . Since the initial development of P(NDI2OD‐T2), extensive research has focused on understanding charge transport phenomena in NDI/thiophene‐based donor/acceptor polymers in connection with thin‐film morphology, tuning donor and/or acceptor units, side‐chain engineering, chain aggregation behavior in solution, processing parameters, annealing conditions, high/low‐k dielectrics, ambipolarity, as well as contact resistance . An important parameter of any polymer, however, is its molecular weight (MW), which, in the context of conjugated polymers, is known to have a profound effect on optoelectronic properties .…”

Section: Introductionmentioning

confidence: 99%

Unconventional Molecular Weight Dependence of Charge Transport in the High Mobility n‐type Semiconducting Polymer P(NDI2OD‐T2)

Nahid

Matsidik

Welford

et al. 2017

Adv Funct Materials

110

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The charge transport and microstructural properties of five different molecular weight (MW) batches of the naphthalenediimide-thiophene copolymer P(NDI2OD-T2) are investigated. In particular, the field-effect transistor (FET) performance and thin-film microstructure of samples with MW varying from M n = 10 to 41 kDa are studied. Unlike conventional semiconducting polymers such as poly(3-hexylthiophene) where FET mobility dramatically drops with decreasing molecular weight, the FET mobility of P(NDI2OD-T2)-based transistors processed from 1,2-dichlorobenzene is found to increase with decreasing MW. Using a combination of grazing-incidence wide-angle X-ray scattering, near-edge X-ray absorption fine-structure spectroscopy, atomic force microscopy, and resonant soft X-ray scattering, the increase in FET mobility with decreasing MW is attributed to the pronounced increase in the orientational correlation length (OCL) with decreasing MW. In particular, the OCL is observed to systematically increase from <100 nm for the highest MW samples to ≈1 µm for the lowest MW samples. The improvement in OCL and hence mobility for low MW samples is attributed to the lack of aggregation of low MW chains in solution promoting backbone ordering, with the pre-aggregation of chains in 1,2-dichlorobenzene found to suppress longer-range liquid crystalline order.

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“…Representative gate voltage (V g )-drain current (I d ) transfer (recorded in saturation; drain voltage (V d ) = −100V) and V d -I d output characteristics for these OFETs are showed in Figure 6. OFETs mobilities were extracted in the saturation region using conventional fitting models [98] and Table 2 summarizes the transistor performance parameters including maximum and average mobility (μ max and μ avg ), threshold voltage (V th ) and current ON/OFF ratio (I ON /I OFF ). The μ max of SeBT (1, 1B, and 1C) based devices is 4.01, 0.60, and 0.09 cm 2 V −1 s −1 while the μ avg are 1.94 ± 0.90, 0.24 ± 0.18, and 0.03 ± 0.02 cm 2 V −1 s −1 , respectively.…”

Section: Charge Transport In Fetsmentioning

confidence: 99%

Heteroalkyl‐Substitution in Molecular Organic Semiconductors: Chalcogen Effect on Crystallography, Conformational Lock, and Charge Transport

Afraj

Lin

Velusamy

et al. 2022

Adv Funct Materials

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The effect of heteroalkyl (-XR, X = Se, S, O) substitution on a series of molecular semiconductors having a 3,3′-diheteroalkyl-2,2′-bithiophene (XBT) central core is studied. Thus, the selenotetradecyl (-SeC 14 H 29 ) SeBT core is investigated by end-functionalization with two dithienothiophene (DTT), thienothiophene (TT), and thiophene (T) units to give SeBTs 1-3, respectively, for molecular π-conjugation effect examination. Furthermore, the selenodecyl (-SeC 10 H 21 ) and selenohexyl (-SeC 6 H 13 ) SeBT cores end-capped with DTTs to give SeBTs 1B and 1C, respectively, are synthesized for understanding -SeR length effects. To address systematically the impact of the chalcogen heteroatom, the newly developed selenoalkyl SeBTs are compared with the previously reported thiotetradecyl (-SC 14 H 29 ) DDTT-SBT (4) and the new tetradecyloxy (-OC 14 H 29 ) DDTT-OBT (5). When fabricating organic field effect transistors by the solution-shearing method, the devices based on the tetradecylated DDTT-SeBT (1) exhibit the highest mobility up to 4.01 cm 2 V −1 s −1 , which is larger than those of the other SeBT compounds and both DDTT-SBT (4) (1.70 cm 2 V −1 s −1 ) and DDTT-OBT (5) (9.32 × 10 −4 cm 2 V −1 s −1 ). These results are rationalized by a combination of crystallographic, morphological, and microstructural analysis.

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Molecular Orientation‐Dependent Bias Stress Stability in Bottom‐Gate Organic Transistors Based on an n‐Type Semiconducting Polymer

Cited by 19 publications

References 54 publications

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors

Unconventional Molecular Weight Dependence of Charge Transport in the High Mobility n‐type Semiconducting Polymer P(NDI2OD‐T2)

Heteroalkyl‐Substitution in Molecular Organic Semiconductors: Chalcogen Effect on Crystallography, Conformational Lock, and Charge Transport

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