2019
DOI: 10.1038/s41563-018-0277-0
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Molecular parameters responsible for thermally activated transport in doped organic semiconductors

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Cited by 154 publications
(228 citation statements)
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“…The intentional introduction of molecular dopants has been used extensively to alter the charge transport properties of organic semiconductors, particularly in the area of organic thin‐film transistors (OTFTs) for which some of the highest carrier mobilities have been achieved via this method 6–9. Molecular doping relies on charge transfer interaction(s) between the dopant and the host semiconductor, which ultimately results in formation of free carriers 10,11. Recent studies have shown that molecular doping may, under certain conditions, induce multiple synergistic effects including microstructural changes to the host semiconductor and drastic improvement in charge carrier transport 6,8,9.…”
Section: Summary Of Operating Parameters Of Solar Cells Based On Pm6:mentioning
confidence: 99%
“…The intentional introduction of molecular dopants has been used extensively to alter the charge transport properties of organic semiconductors, particularly in the area of organic thin‐film transistors (OTFTs) for which some of the highest carrier mobilities have been achieved via this method 6–9. Molecular doping relies on charge transfer interaction(s) between the dopant and the host semiconductor, which ultimately results in formation of free carriers 10,11. Recent studies have shown that molecular doping may, under certain conditions, induce multiple synergistic effects including microstructural changes to the host semiconductor and drastic improvement in charge carrier transport 6,8,9.…”
Section: Summary Of Operating Parameters Of Solar Cells Based On Pm6:mentioning
confidence: 99%
“…The physical origin of this thermal activation energy E a is still under debate. Very recently, Schwartze et al have established that charge transport is controlled by the properties of host‐dopant integer charge‐transfer complexes (ICTCs) in efficiently doped organic semiconductors . Coulomb binding energy of ICTCs limits charge transport at low doping concentration.…”
Section: Charge Transportmentioning
confidence: 99%
“…At high doping concentration, E a recorded for a same matrix but with different dopants converge to a single value that is matrix dependent. Noteworthy is the fact that the matrix of C 60 2 with various dopants exhibits the lowest activation energies E a < 100 meV and the highest conductivity of electrons σ e on the order of 10 S cm −1 . This likely denotes the ability of fullerene to accommodate smaller dopant molecules within its crystal lattice but also to distribute charges over a large number of first neighbors due to electronic couplings extending in three dimensions.…”
Section: Charge Transportmentioning
confidence: 99%
“…It is worth noting that the temperature dependence of conductivity in hot‐cast sample shows a sharp transition at ≈ 280 K, corresponding to the critical point for the trapping/activation of carriers in the in‐gap state at boundaries . According to the Nernst−Einstein equation σ T=σ0T exp EakT we could derive an activation energy E a = 60 meV by fitting ln( σT ) in the temperature range of 77–300 K (Figure S6, Supporting Information), indicating that the in‐gap state has the feature of shallow traps and is slightly lower that the band‐gap state in the energy level alignment …”
mentioning
confidence: 99%