Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

Hoffmann, Rudolf C.; Kaloumenos, Mareiki; Heinschke, Silvio; Erdem, Emre; Jakes, Peter; Eichel, Rüdiger‐A.; Schneider, Jörg J.

doi:10.1039/c3tc00841j

Cited by 35 publications

(39 citation statements)

References 52 publications

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“…The influence of the calcination holding time is observed on the optical band gap of the entire samples as illustrated in Figure 11. Our findings revealed that the

E_{g}

values obtained from the experimental band gap using Equation (2) decreased with increasing the holding time over the range of 5.39 eV at 1 h to 5.27 at 4 h. It has been reported that the electronic performance of a semiconductor material depends heavily on the synthesis condition such as heat treatment in which the calcination temperature affects the crystallinity of the material [59]. In this light, when the particle size of a certain material is reduced, the number of atoms that made up the particle reduces as well.…”

Section: Resultsmentioning

confidence: 72%

Effects of Calcination Holding Time on Properties of Wide Band Gap Willemite Semiconductor Nanoparticles by the Polymer Thermal Treatment Method

et al. 2018

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Willemite is a wide band gap semiconductor used in modern day technology for optoelectronics application. In this study, a new simple technique with less energy consumption is proposed. Willemite nanoparticles (NPs) were produced via a water–based solution consisting of a metallic precursor, polyvinylpyrrolidone (PVP), and underwent a calcination process at 900 °C for several holding times between 1–4 h. The FT–IR and Raman spectra indicated the presence of metal oxide bands as well as the effective removal of PVP. The degree of the crystallization and formation of the NPs were determined by XRD. The mean crystallite size of the NPs was between 18.23–27.40 nm. The morphology, particle shape and size distribution were viewed with HR-TEM and FESEM analysis. The willemite NPs aggregate from the smaller to larger particles with an increase in calcination holding time from 1–4 h with the sizes ranging between 19.74–29.71 nm. The energy values obtained from the experimental band gap decreased with increasing the holding time over the range of 5.39 eV at 1 h to at 5.27 at 4 h. These values match well with band gap obtained from the Mott and Davis model for direct transition. The findings in this study are very promising and can justify the use of these novel materials as a potential candidate for green luminescent optoelectronic applications.

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“…The influence of the calcination holding time is observed on the optical band gap of the entire samples as illustrated in Figure 11. Our findings revealed that the

E_{g}

Section: Resultsmentioning

confidence: 72%

Effects of Calcination Holding Time on Properties of Wide Band Gap Willemite Semiconductor Nanoparticles by the Polymer Thermal Treatment Method

et al. 2018

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“…Precursor ratios for obtaining an IZO composition (In:Zn, 6:4) and a ZTO composition (Sn:Zn, 7:3) were used. [12b,21] The spin‐coated and subsequently UV‐photopatterned films were finally thermally annealed on a hot plate at temperatures ranging from 250 to 350 °C (±5 °C) in ambient air for 2 h. No additional further post‐processing of the so‐fabricated devices was employed. It should be mentioned here that sole UV‐irradiation of the precursor films does not lead to any electronic behavior whatsoever.…”

Section: Resultsmentioning

confidence: 99%

“…Precursor Synthesis : Precursor synthesis of the indium, zinc, and tin(II) precursors with Schiff‐base methoxyiminopropionic acid “oximato” ligands, namely tris[2‐(methoxyimino)‐propanoato]indium(III), bis[2‐(methoxyimino)propanoato]zinc and bis[2‐(methoxyimino)‐propanoato]tin(II) was reported. [12b,e,21]…”

Section: Methodsmentioning

confidence: 99%

Direct Photopatterning of Solution–Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors—A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides

Sanctis

Hoffmann

Bruns

et al. 2018

Adv Materials Inter

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Direct photopatterning of indium zinc oxide (IZO) and zinc tin oxide (ZTO) semiconductors is realized using Schiff‐base complexes of indium, zinc, and tin(II) with methoxyiminopropionato ligands as precursors. These precursor complexes are stable under visible light, but they interestingly decompose in the UV region, thereby facilitating a site‐selective photopatterning and its subsequent conversion to the desired amorphous oxides. Thin film transistors (TFTs) with photopatterned IZO and ZTO layers exhibit high performance after post‐annealing at relatively low temperatures between 250 and 350 °C, with charge‐carrier mobilities (µsat) of 7.8 and 3.6 cm2 (V s)−1 for IZO and ZTO, respectively. The mechanism of the photodecomposition of the precursor films is studied by attenuated total reflectance–Infrared spectroscopy. Apart from the electrical characterization, the resultant UV‐patterned oxide thin films are characterized by transmission electron microscopy micrographs of focussed ion beam (FIB)‐prepared cross sections, atomic force microscopy, as well as Auger depth profiles. X‐ray photoelectron spectroscopy investigations elucidate the influence of surface hydroxylation on the TFT performance. The straightforward approach of facile precursor UV‐photopatterning demonstrates its potential feasibility as a low‐cost method toward integration of such solution–processed oxide films into large‐area electronics.

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“…[15][16][17] Successful doping of ZnO would provide means i) to further enhance electron mobility necessary for display technologies and ii) to control threshold voltage in TFTs useful for logic circuit designing 10,15,[18][19][20][21][22] . Traditionally, ZnO doping has been carried out employing the group IIIA elements such as In or Ga. [23][24][25][26][27][28][29] The resulting doped ZnO materials are more often called as IZO (indium doped zinc oxide) or IGZO (indium gallium zinc oxide). In spite of the improved electrical properties of these doped ZnO semiconductors, however, there remain critical issues for utilizing IZO or IGZO in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO

Yu,

Kim,

Kang

et al. 2013

ACS Appl. Mater. Interfaces

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An In/Ga-free doping method of zinc oxide (ZnO) is demonstrated utilizing a printable charge transfer doping layer (CTDL) based on (3-aminopropyl)triethoxysilane (APS) molecules. The self-assembled APS molecules placed on top of ZnO thin films lead to n-type doping of ZnO and filling shallow electron traps, due to the strong electron-donating characteristics of the amine group in APS molecules. The CTDL doping can tune the threshold voltage and the mobility of the ZnO thin-film transistors (TFTs) as one varies the grafting density of the APS molecules and the thickness of the underneath ZnO thin films. From an optimized condition, high-performance ZnO TFTs can be achieved that exhibit an electron mobility of 4.2 cm(2)/(V s), a threshold voltage of 10.5 V, and an on/off current ratio larger than 10(7). More importantly, the method is applicable to simple inkjet processes, which lead to produce high-performance depletion load ZnO inverters through selective deposition of CTDL on ZnO thin films.

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Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

Cited by 35 publications

References 52 publications

Effects of Calcination Holding Time on Properties of Wide Band Gap Willemite Semiconductor Nanoparticles by the Polymer Thermal Treatment Method

Effects of Calcination Holding Time on Properties of Wide Band Gap Willemite Semiconductor Nanoparticles by the Polymer Thermal Treatment Method

Direct Photopatterning of Solution–Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors—A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides

In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO

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