20th AIAA International Space Planes and Hypersonic Systems and Technologies Conference 2015
DOI: 10.2514/6.2015-3567
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Molecular Simulation of Oxygen Reactions with Realistic Carbon and Silica Surfaces at High Temperature

Abstract: Recent computational results for gas-surface reactions including atomic level simulations of oxygen-silica recombination and microstructure level simulations of carbon-based ablative surfaces are summarized. Atomic level calculations of oxygen-silica reactions show the main recombination mechanism to be non-activated (associated with no energy barrier). This is in contradiction to current empirical models fit to limited experimental data. For ablative porous and non-porous TPS, where complex microstructure is … Show more

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Cited by 3 publications
(2 citation statements)
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“…As such, we assume that, unlike recombination on a regular stable chemisorption site, recombination on a metastable chemisorption site has no energy barrier. This is in line with the work by Schwartzentruber et al [33], where atomic level Molecular Dynamics and Density Functional Theory calculations of oxygen-silica reactions show the main recombination mechanism (O + (Si − O − O)) to be non-activated (associated with no energy barrier). Models of Si metastable chemisorption site creation in hydrogenated amorphous silicon have been proposed by Powell et al [32], considering both light-induced and bias-stress-induced defect creation.…”
Section: Metastable Chemisorption Site Productionsupporting
confidence: 91%
“…As such, we assume that, unlike recombination on a regular stable chemisorption site, recombination on a metastable chemisorption site has no energy barrier. This is in line with the work by Schwartzentruber et al [33], where atomic level Molecular Dynamics and Density Functional Theory calculations of oxygen-silica reactions show the main recombination mechanism (O + (Si − O − O)) to be non-activated (associated with no energy barrier). Models of Si metastable chemisorption site creation in hydrogenated amorphous silicon have been proposed by Powell et al [32], considering both light-induced and bias-stress-induced defect creation.…”
Section: Metastable Chemisorption Site Productionsupporting
confidence: 91%
“…These DFT results will be reported in a separate paper. The regeneration mechanism for Si-O-Osites has also been studied by Schwartzentruber et al [61].…”
Section: Recombination Probability At Pressures Below 075 Torrmentioning
confidence: 92%