Molecular simulation strategy for mechanical modeling of amorphous/porous low-dielectric constant materials

Yuan, Chengye; Sluis, O. van der; Zhang, G. Q.; Ernst, L.J.; Driel, W.D. van; Flower, A.E.; Silfhout, R.B.R. van

doi:10.1063/1.2832639

Cited by 15 publications

(12 citation statements)

References 15 publications

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“…In literature, molecular dynamics (MD) methods have been used to develop atomistic models of low-k materials and the mechanical properties as well as the fracture behavior were analyzed. [37][38][39][40][41][42] H. Li and co-authors used molecular dynamics simulations to investigate the fundamental structure-property relationships of OSG low-k with a primary focus on the mass density and elastic properties. 43 To examine the role of the bridging units and terminal groups, two idealized classes of molecular models were considered that are built out of the backbone structure of amorphous silica.…”

Section: Impact Of Network Structure and Uv Radiation On Mechanical Smentioning

confidence: 99%

Mechanical Stability of Porous Low-k Dielectrics

Vanstreels

Baklanov

2014

ECS J. Solid State Sci. Technol.

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This paper reviews the mechanical and fracture properties of porous ultralow-k dielectrics with the focus on chip package interaction related issues. It is shown that the mechanical and fracture properties of porous ultralow-k dielectric films are closely linked with porosity, pore morphology, network structure and deposition technology, while their fracture properties are also sensitive to reactive species in the environment. The survivability of low-k dielectrics upon integration, package assembly and subsequent reliability tests is therefore a combination of their mechanical stability, fracture properties, the specific mechanical or thermo-mechanical load and environmental effects. For the past three decades, the semiconductor industry has been improving the performance of microelectronic devices and the functionality of advanced integrated circuits through the continuous scaling of integrated circuits and the maximization of transistor density.1 Consequently, this encourages the introduction of new materials, processes, chip designs, and packaging strategies into micro-/nano-electronic products. Among these material innovations are insulating materials with a dielectric constant (k) less than that of SiO 2 , so called low-k dielectrics. During the last 15 years, various materials and methods have been developed for fabricating low-k dielectric films, among which the plasma enhanced chemical vapor deposition (PECVD) technology of porous organosilicate glasses (OSG) is the most popular due to its better compatibility with the technological needs.2-5 The reduction in k for low-k dielectrics is being pursued through the introduction of controlled levels of porosity. However, finding a good low-k material has proven to be much more challenging than first expected due to a number of integration and reliability issues.1 Besides the need of being compatible with the different lithography, etching, stripping and cleaning processes that are used in state-of-the-art integration schemes, they must also have sufficient mechanical strength to withstand the high shear stresses as well as harsh chemical environments that are involved during the chemical mechanical polishing process without cohesive or adhesive failure occurring.6-8 On top of that, since low-k dielectrics exhibit intrinsic tensile stresses and have increased coefficients of thermal expansion compared to SiO 2 , thin film cracking and adhesion are serious thermal-mechanical reliability issues for low-k dielectric materials (Figure 1). 9,10 Thermo-mechanical deformation of the package during package assembly and subsequent reliability tests can induce large local stresses that can initiate and propagate cohesive and/or adhesive cracks in different back-end of line (BEOL) layers.11 Therefore, a careful characterization of the mechanical integrity of potential new low-k candidates is required to integrate these new materials and Cu interconnects and to assure reliability during chip packaging and under field conditions. In the microelectronics industry, the elas...

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Section: Impact Of Network Structure and Uv Radiation On Mechanical Smentioning

confidence: 99%

Mechanical Stability of Porous Low-k Dielectrics

Vanstreels

Baklanov

2014

ECS J. Solid State Sci. Technol.

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“…A schematic picture of SiOC(H) is shown in Fig. 4.46 [73]. The different Si atoms are usually related to the number of linked O atoms: zero (Z), mono (M), di (D), tri (T), and quadri (Q).…”

Section: Atomistic Model Of Sioc:hmentioning

confidence: 99%

Advances in Delamination Modeling of Metal/Polymer Systems: Atomistic Aspects

Sluis

Iwamoto

et al. 2018

Nanopackaging

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“…In order to predict the Young's modulus of the molecule, a bar shaped molecular model is established [3][4][5]. Along the longitudinal direction, one end of the model is fixed in all degrees of freedom and a displacement with aconstant velocity is applied to the opposite end(which is illustrated in the inset).…”

Section: Boundary/loading Conditionsmentioning

confidence: 99%

“…Due to the amorphous and porous nature of the low-k material, a unique modeling technique is usded to introduce the atomic structure into the MD software. The detail description of the generation algorithm can be found in Ref [3,5]. Basically, the chemical structure of the low-k material is classified as four different basic building blocks, which has 4, 3, and 2 connection capabilities.…”

Section: Introductionmentioning

confidence: 99%

The mechanical influence of the porosity and nano-scale pore size effect of the SiOC(H) dielectric film

Yuan

Flower

Sluis

et al. 2008

EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronic

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We propose a molecular modeling method which is capable of modeling the mechanical impact of the porosity and pore size to the amorphous silicon-based low-dielectric (low-k) material. Due to the electronic requirement of advanced electronic devices, low-k materials are in demand for the IC backend structure. However, due to the amorphous nature and porosity of this material, it exhibits low mechanical stiffness and low interfacial strength, as well as inducing numerous reliablity issues. The mechanical impact of the nanoscaled pore, including the porosity ratio and pore size, is simulated using molecular dynamics on the mechanical stiffness and interfacial strength. A fitting function is formulated based on the continuum homogenour theory and atomic interaction in nano-scale. The simulation results are fitted into analytical equation based on the homogenous theory.

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Molecular simulation strategy for mechanical modeling of amorphous/porous low-dielectric constant materials

Cited by 15 publications

References 15 publications

Mechanical Stability of Porous Low-k Dielectrics

Mechanical Stability of Porous Low-k Dielectrics

Advances in Delamination Modeling of Metal/Polymer Systems: Atomistic Aspects

The mechanical influence of the porosity and nano-scale pore size effect of the SiOC(H) dielectric film

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