Molecular structure, microstructure, macrostructure and properties of silicon nitride

Jennings, Hamlin M.; Edwards, John O.; Richman, M. H.

doi:10.1016/s0020-1693(00)94111-2

Cited by 43 publications

(8 citation statements)

References 11 publications

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“…The inset of Figure 2a schematically illustrates the relationship between the heat of formation and the activation energy of the thermal decomposition of the structure (8 × 8), as well as it shows the energy diagram of the Si 3 N 4 amorphous phase formation. The heat of formation of bulk β-Si 3 N 4 is about 8 eV [26,31], which is much larger than the heat of the (8 × 8) structure formation estimated here.…”

Section: Thermal Decomposition Of a Two-dimensional Layer (8 × 8)contrasting

confidence: 57%

“…The figure clearly shows that there is a slight decrease in the rate of formation of the structure (8 × 8) with increasing temperature, which indicates the absence of an activation barrier in this process in contrast to a-Si 3 N 4 formation. This fact also does not agree with the formation of a crystalline β-Si 3 N 4 layer, which requires the overcoming of a large activation barrier [26].…”

Section: Kinetics and Thermodynamics Of G-sin Formation On The Si (11mentioning

confidence: 88%

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Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

Мансуров¹,

Galitsyn²,

Малин³

et al. 2019

2D Materials

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A systematic study of kinetics and thermodynamics of Si (111) surface nitridation under ammonia exposure is presented. The appeared silicon nitride (8 × 8) structure is found to be a metastable phase. Experimental evidences of graphenelike nature of the silicon nitride (8 × 8) structure are presented. Interlayer spacings in the (SiN) 2 (AlN) 4 structure on the Si (111) surface are found equal to 3.3 Å in SiN and 2.86 Å in AlN. These interlayer spacings correspond to weak van der Waals interaction between layers. In contrast to the widely accepted model of a surface structure (8 × 8) as monolayer of β-Si 3 N 4 on Si (111) surface, we propose a new graphene-like Si 3 N 4 (g-Si 3 N 3 and/or g-Si 3 N 4) model for the (8 × 8) structure. It is revealed that the deposition of Al atoms on top of a highly ordered (8 × 8) structure results in graphene-like AlN (g-AlN) layers formation. The g-AlN lattice constant of 3.08 Å is found in a good agreement with the ab initio calculations. A transformation of the g-AlN to the bulk-like wurtzite AlN is analyzed.

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Section: Thermal Decomposition Of a Two-dimensional Layer (8 × 8)contrasting

confidence: 57%

Section: Kinetics and Thermodynamics Of G-sin Formation On The Si (11mentioning

confidence: 88%

Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

Мансуров¹,

Galitsyn²,

Малин³

et al. 2019

2D Materials

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“…When a quartz crucible is used without coating, reactions between the silicon melt and the quartz (SiO 2 ) will lead to sticking during cooling [2]. This results in stresses and even cracking of the silicon ingot, hence decreasing the productivity [5]. Therefore, the charging of feedstock is critical, since scratching of the coating can cause reactions between the crucible and silicon.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxidation on the wetting behavior of liquid silicon on Si3N4-coated substrates

Brynjulfsen

Bakken

Tangstad

et al. 2010

Journal of Crystal Growth

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“…Among the silicon nitride compounds, Si 3 N 4 has been known as the only well-defined bulk compound [18]. Here, we can assume that a (0001)β-Si 3 N 4 layer with a hexagonal symmetry is formed on top of the Si(111) surface.…”

Section: Resultsmentioning

confidence: 99%

Interaction of low-energy nitrogen ions with an Si(111)-7×7 surface: STM and LEED investigations

Park

Yun

et al. 1998

Applied Physics A: Materials Science & Processing

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We report on scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) investigations of the interaction of low-energy nitrogen ions with a Si(111)-7 × 7 surface in the initial stage of nitridation. On silicon nitride islands showing a quadruplet LEED pattern a triangular periodicity of white protrusions with an average separation of 10-11 Å was observed in the STM image. Furthermore, the symmetry directions of the white protrusions were rotated about 10 • with respect to those of Si(111) surface, which was consistent with the LEED observation of dominant diffraction spots in that direction. The preferential appearance of dark Si adatoms due to bonding with nitrogen atoms on the center adatom sites compared with corner sites is explained in terms of the thermal stability of the product after nitridation. We also found that elevation of the nitridation temperature to 950 • C dramatically improved the quality of the silicon nitride layer owing to the improved mobilities of reacting species.There have been extensive efforts to deposit ordered silicon nitride layers using various methods, since silicon nitride is a versatile material which is used for high-temperature structural ceramics as well as for electronic device applications. As the size of semiconductor devices becomes small, control and understanding of the chemical reactions on the surfaces at the atomic scale have become an essential part of current research. For nitridation of silicon surfaces a variety of reacting species have been used: gaseous molecules such as NH 3 [1-5], NO [6-8], N 2 [9], N atoms [10-12], plasma [13,14] and ion beams [15]. Among these, a recent report on the ion-induced nitridation of a Si(111)-7 × 7 surface showed a high potential for low-energy nitrogen ions as the reacting species for the growth of silicon nitride film [15]. For the structures and chemical compositions of silicon nitride layers conventional techniques, such as low-energy electron diffraction (LEED), Auger electron spectroscopy and electron energy loss spectroscopy (EELS), have mostly been employed. * Corresponding author However, the local surface structures and chemical reactivity at the atomic scale can be probed directly by scanning tunneling microscopy (STM). In particular, the LEED studies suggested that two different surface structures, 8 × 8 and quadruplet structures, appear on the silicon nitride layer depending upon the annealing temperature and the carbon concentration [10,16]. However, recent STM observations [5,8] of the 8 × 8 structure on silicon nitride could not be explained in terms of the atomic structures proposed based upon the LEED interpretation. In the initial stage of nitridation by NH 3 gas, different reactivities of Si atoms at different adatom sites were observed at room temperature, and this was interpreted in terms of the interactions and charge transfer between sites [3,4].In this paper we investigate the interaction of low-energy nitrogen ions with an Si(111)-7 × 7 surface in the initial stage of nitridation. In...

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Molecular structure, microstructure, macrostructure and properties of silicon nitride

Cited by 43 publications

References 11 publications

Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

Influence of oxidation on the wetting behavior of liquid silicon on Si3N4-coated substrates

Interaction of low-energy nitrogen ions with an Si(111)-7×7 surface: STM and LEED investigations

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