“…In particular, mesoporous-structure devices based on the TiO 2 scaffold are dominant in the efficiency competition in PSCs, with certified PCE jumping from 14.1% in 2013 to 25.5% in 2021 . Unfortunately, the fabrication of mesoporous-TiO 2 requires high-temperature sintering (450–550 °C) to improve crystallinity and carrier mobility, which restricts its application in flexible and tandem PSCs. , Alternatively, planar PSCs with low-temperature processing (<150 °C) open many possibilities for plastic conductive substrates and device structures choice and have been intensively researched, especially for the ETL material, such as compact-TiO 2 , SnO 2 , and ZnO. − Among them, devices based on SnO 2 with PCE over 25% have emerged one after another and are expected to achieve a higher record efficiency breakthrough through modification of ETL materials, yet the low-cost, reserved-abundant TiO 2 has more prominent advantages for commercialization and large-scale production of PSCs . However, it was claimed that the low-temperature deposited compact-TiO 2 ETLs have low electron mobility and poor film quality, resulting in excessive charge carrier accumulation, severe nonradiative recombination losses, and inferior long-term stability of PSCs.…”