Molybdenum oxide: A superior hole extraction layer for replacing p-type hydrogenated amorphous silicon with high efficiency heterojunction Si solar cells

Mallem, Kumar; Kim, Yong Jun; Hussain, Shahzada Qamar; Dutta, Subhajit; Le, Anh Huy Tuan; Ju, Minkyu; Park, Jinjoo; Cho, Young Hyun; Kim, Young-Kuk; Cho, Eun‐Chel; Yi, Junsin

doi:10.1016/j.materresbull.2018.10.018

Cited by 44 publications

(20 citation statements)

References 39 publications

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“…Oxide thin-films have been also implemented in crystalline silicon solar cells (c-Si) (see e.g. [418] , [419] , [420] , [421] , [422] , [423] ), crystalline germanium solar cells (c-Ge) (see e.g. [424] ) and singlecrystal III-V (see e.g.…”

Section: Wide Bandgap Ferroelectric Oxide Thin-filmsmentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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New device concepts and new computing principles are needed to balance our ever-growing appetite for data and information with the realization of the goals of increased energy efficiency, reduction in CO 2 emissions and the circular economy. Neuromorphic or synaptic electronics is an emerging field of research aiming to overcome the current computer's Von-Neumann bottleneck by building artificial neuronal systems to mimic the extremely energy efficient biological synapses. The introduction of photovoltaic and/or photonic aspects into these neuromorphic architectures will produce self-powered adaptive electronics but may also open up new possibilities in artificial neuroscience, artificial neural communications, sensing and machine learning which would enable, in turn, a new era for computational systems owing to the possibility of attaining high bandwidths with much reduced power consumption. This perspective is focused on recent progress in the implementation of functional oxide thinfilms into photovoltaic and neuromorphic applications towards the envisioned goal of selfpowered photovoltaic neuromorphic systems or a solar brain.

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Section: Wide Bandgap Ferroelectric Oxide Thin-filmsmentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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“…One of the proposed reasons for this degradation is the effusion of H from surrounding layers, particularly i-a-Si:H. Essig et al have reported that a pre-annealing of i-a-Si:H before MoOx deposition leads to improved thermal stability by reducing the hydrogen-related degradation of MoOx, which results in weak band bending at the hole contact region due to the lowered work function of the MoOx [22,23]. In addition, annealing in an Ar atmosphere has been shown to minimize the stoichiometric reduction of MoOx, which also lowers the work function of MoOx [24,25]. In another approach, stacking MoOx with a high work function metal, e.g.…”

Section: Introductionmentioning

confidence: 99%

Interface analysis and intrinsic thermal stability of MoOx based hole-selective contacts for silicon heterojunction solar cells

Cho

Nawal

Hadipour

et al. 2019

Solar Energy Materials and Solar Cells

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Highlights• MoOx is used to replace p-a-Si:H at the hole contactin silicon heterojunction (SHJ) solar cells, leading to a reduction of parasitic absorption and a JSC improvement on average of 0.5 mA/cm 2 .• Influence of MoOx thickness and annealing condition on the SHJ cell performance was studied and optimal parameters were determined.• Impact of MoOx thickness and anneal treatment on the thin film interfaces at the hole contact was investigated and an interfacial dipole in the form of a-SiOx was postulated.• A glass to glass 1-cell mini-module was fabricated using a MoOx-contacted SHJ cell.• After damp-heat testing, good long-term stability was achieved at module-level, with a degradation of less than 3%abs (passing the IEC61215 standard).

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“…Moreover, TMOs deposition can be carried out with simple and low-cost processes [15]. In fact, several groups devoted research works on TMOs-based solar cells [16][17][18][19][20][21][22][23][24][25] achieving conversion efficiency values up to 23.5% [26]. Interestingly, TMOs exhibit electronic properties favorable for electron transport as in case of zinc oxide (ZnO) [27] or titanium dioxide (TiO2) [28] and also for hole transport as in case of molybdenum trioxide (MoO3) [29], vanadium pentoxide (V2O5) [30] or tungsten trioxide (WO3) [21].…”

Section: Introductionmentioning

confidence: 99%

“…Interestingly, TMOs exhibit electronic properties favorable for electron transport as in case of zinc oxide (ZnO) [27] or titanium dioxide (TiO2) [28] and also for hole transport as in case of molybdenum trioxide (MoO3) [29], vanadium pentoxide (V2O5) [30] or tungsten trioxide (WO3) [21]. In particular, amorphous sub-stochiometric MoOx (x ~ 3) is the most common TMO for the hole selective contact [15][16][17][18][19][20]. This material presents good hole selectivity and its large energy gap (around 3 eV) allows optical gain respect to a standard a-Si:H(p) [19].…”

Section: Introductionmentioning

confidence: 99%

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

et al. 2020

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The application of molybdenum oxide in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells in the role of hole selective contact. For modeling-based optimization of such contact, knowledge of the molybdenum oxide defect density of states (DOS) is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of defects related to oxygen-vacancy and of polaron is supported by the results of our opto-electrical characterizations along with the evaluation of previous observations. As part of the study, molybdenum oxide samples have been evaluated after post-deposition thermal treatments. Quantitative results are in agreement with the result of density functional theory showing the presence of a defect band fixed at 1.1 eV below the conduction band edge of the oxide. Moreover, the distribution of defects is affected by post-deposition treatment.

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Molybdenum oxide: A superior hole extraction layer for replacing p-type hydrogenated amorphous silicon with high efficiency heterojunction Si solar cells

Cited by 44 publications

References 39 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Interface analysis and intrinsic thermal stability of MoOx based hole-selective contacts for silicon heterojunction solar cells

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

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