Momentum-density effects upon the electronic stopping of elemental solids

Wang, J; Mathar, Richard J.; Trickey, S. B.; Sabin, John R.

doi:10.1088/0953-8984/11/20/304

Cited by 8 publications

(4 citation statements)

References 60 publications

(69 reference statements)

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“…Many different physical processes contribute to the electronic stopping: ionization of the target atoms, excitation of electrons into the conduction band, collective electronic excitations such as plasmons, etc. [89][90][91][92][93][94][95][96][97][98][99][100][101][102] Electronic stopping dominates at high ion energies ͑see Fig. 2͒.…”

Section: A Production Of Defects In Bulk Targetsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

946

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: A Production Of Defects In Bulk Targetsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

946

591

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“…It was applied to stopping power of heavy ions in matter using the logarithmic high energy limit [33][34][35]. Later developments of this model included the extension to isolated atoms by Rosseau, Chu and Powers [36], and to intermediate energies with the fully dielectric formulation [37][38][39][40][41][42][43][44]. Chu [45] employed the LPA for energy loss straggling calculations by using the full dielectric formalism and Hartree-Fock-Slater charge distribution for the target atom.…”

Section: General Description and Ranges Of Validitymentioning

confidence: 99%

“…In the original LPA [33][34][35][36][37][38][39][40][41][42][43][44][45], the response of bound electrons is described as a whole by using the total density of electrons in the atom. This gives rather good description at high energies, but too low values at intermediate energies, as we will see in what follows.…”

Section: General Description and Ranges Of Validitymentioning

confidence: 99%

The energy loss straggling of low Z ions in solids and gases

Montanari

Miraglia

2013

AIP Conference Proceedings

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We present a study on the energy loss straggling of low Z ions (H up to B) in different solid (Al, Ti, Cu, Zn, Ge, Au) and gaseous targets (Ne, Ar, Kr, Xe). This work includes on one side, a critical analysis of the available experimental data and possible non-statistical (rugosity and inhomogeneity) contributions. On the other side, theoretical calculations performed by using the shell-wise local plasma approximation and the comparison of these results with the experimental data and with other theoretical curves available in the literature. We find that for the ions here considered, the square of the energy loss straggling normalized to Bohr limit is independent of the ion nuclear charge and of the ion charge state, in the case of electrons bound to the projectile. This shows a clear Z 2 dependence of the square energy loss straggling, with Z being the ion nuclear charge. The tendency to Bohr limit at high energies, and the inconvenience of using Yang formula (Q. Yang etal, Nucl. Instrum. Meth. Phys. Res B 61, 149-155 (1991)) are also mentioned. The bases for the future development of a general formula for the energy loss straggling are introduced.

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“…However, this model does not presently treat channeling anisotropies in the electron distribution, 14 and hence is not applicable here.…”

mentioning

confidence: 99%

Electronic stopping calculated using explicit phase shift factors

et al. 2001

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Predicting range profiles of low-energy ͑0.1-10 keV/amu͒ ions implanted in materials is a long-standing problem of considerable theoretical and practical interest. We combine here the best available method for treating the nuclear slowing down, namely a molecular-dynamics range calculation method, with a method based on density-functional theory to calculate electronic slowing down for each ion-target atom pair separately. Calculation of range profiles of technologically important dopants in Si shows that the method is of comparable accuracy to previous methods for B, P, and As implantation of Si, and clearly more accurate for Al implantation of Si.Calculating the force which slows down energetic ions traversing in materials ͑the stopping power͒ is a longstanding problem of considerable theoretical and practical interest. 1-3 While the stopping power caused by collisions between an ion and atoms can now be predicted very accurately, 4-6 there is still uncertainty in how the stopping caused by collisions between an ion and electrons ͑electronic stopping͒ should be calculated for ion velocities below the Bohr velocity ͑namely at energies of the order of 0.1-10 keV/amu͒. This is an especially pressing problem for obtaining range profiles for dopants implanted in crystal channel directions in semiconductors, since on one hand the uncertainties are particularly large in this case and on the other hand this case is important for the microelectronics industry.The most common approach for obtaining stopping powers is to first derive a stopping power for a proton in a material, and then use a scaling law to obtain the stopping power of heavier ions. To obtain the stopping power of the proton, the most popular approach is to use models 7,8 based on the scattering phase shifts for Fermi-surface electrons. The phase shifts are determined within the density-functional theory ͑DFT͒ ͑Ref. 9͒ for a proton embedded in a homogeneous electron gas. 10,11 This approach has proven successful for some technologically important ion-target combinations, such as B-Si, P-Si, and As-Si, 12,5,13 but leads into severe difficulties ͑a physically unjustified parameter value͒ for the case of Al-Si. 5 However, the original model with self-consistently determined phaseshifts offers another, frequently overlooked, approach to obtain stopping powers for heavy ions. Instead of using scaling laws, it is possible to explicitly calculate phase shift factors for any given ion-target atom combinations. The phase shift factors can be calculated directly from DFT, so this approach does not use any empirical or fitted input factors.Another noteworthy approach to predicting the electronic stopping is the local plasma approximation. However, this model does not presently treat channeling anisotropies in the electron distribution, 14 and hence is not applicable here.In this paper, we combine the best available simulations methods for calculating ion range profiles with electronic stopping powers derived from realistic three-dimensional charge distributions of t...

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Momentum-density effects upon the electronic stopping of elemental solids

Cited by 8 publications

References 60 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

The energy loss straggling of low Z ions in solids and gases

Electronic stopping calculated using explicit phase shift factors

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