2022 International Semiconductor Conference (CAS) 2022
DOI: 10.1109/cas56377.2022.9934143
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Abstract: The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of th… Show more

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