Monitoring epiready semiconductor wafers

Allwood, D. A.; Cox, Susan; Mason, Nigel J.; Palmer, R.A; Young, Robert J.; Walker, P.J.

doi:10.1016/s0040-6090(02)00316-4

Cited by 29 publications

(20 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, regardless of the age of the epi-ready preparation, substantial improvement of the substrate morphology after the oxide desorption was obtained by employing the two-stage process, with the partial oxide removal by exposure to Ga flux at temperatures below 500°C. The experiments performed on the oldest epi-ready wafers used in the present study, which were stored for four years in an opened cassette rather than a sealed nitrogen filled bag, showed a still considerable, albeit smaller benefit of the partial oxide removal with Ga exposure, indicating that the corrosion of the GaAs by Ga 2 O 3 has already started during wafer storage, consistent with reports by Allwood et al 5 Nevertheless, a removal of about 80% of the oxide during the Ga exposure stage from these wafers resulted in the rms roughness of 0.57 nm and ⌬ max of Ϫ7.8 nm, which is by a factor of 2 better than for standard oxide desorption from the fresh epi-ready substrate.…”

Section: Resultssupporting

confidence: 91%

“…Although a combination of smoothing superlattices and thick GaAs buffer layers can effectively planarize the surface, their deposition takes time, consumes elements, and could be undesirable for a variety of other reasons. Research done on the aging mechanisms of ''epi-ready'' GaAs ͑001͒ wafer surfaces 4,5 suggests that the longer time elapsed since the epi-ready surface preparation, the rougher the GaAs substrate surface is after the oxide removal. This has been attributed to a spatially inhomogeneous bulk reaction between the GaAs surface and the arsenic oxide: 2GaAsϩAs 2 O 3 →4As ϩGa 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux

Wasilewski

Baribeau

Beaulieu

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux Wasilewski, Z. R.; Baribeau, J. -M.; Beaulieu, M.; Wu, X.; Sproule, G. I.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743917&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743917&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1116/1.1752913 Science and Technology B, 22, 3, pp. 1534-1538, 2004 Studies of oxide desorption from GaAs substrates via Ga 2 O 3 to Ga 2 O conversion by exposure to Ga flux Removal of the native oxide from GaAs wafers in the process of thermal desorption in the presence of As flux causes very significant surface degradation. We examine the merits of an alternative oxide desorption method that consists in a standard thermal oxide removal procedure preceded by a partial oxide removal at lower temperatures via conversion of the stable Ga 2 O 3 surface oxide into a volatile Ga 2 O oxide by a pulsed supply of Ga in the absence of As flux. We find that a reduction of the substrate roughness by more than one order of magnitude is obtained on most epi-ready GaAs substrates regardless of their age, even if only 70% of the original gallium oxide is removed with Ga pulses, and that nearly atomically smooth surfaces are obtained with 90% oxide removal. Journal of VacuumIn addition, we demonstrate that the Ga-induced oxide removal process is laterally inhomogeneous, making this method vulnerable to the accumulati...

show abstract

Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux

Wasilewski

Baribeau

Beaulieu

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…Surface roughness and impurity contamination have been correlated with poor surface morphology, interfacial carrier accumulation (or depletion), and interface states, all of which negatively impact material quality and device performance [1][2][3][4][5][6]. While the use of epiready GaAs and InP substrates may be considered more routine [7], epiready GaSb substrates had a rougher surface morphology after thermal desorption of the oxide layer compared to ones that had been first prepared by chemically etching in HCl and then thermally cleaned [6]. The increased roughness was attributed to a thicker oxide layer on the epiready surface.…”

Section: Introductionmentioning

confidence: 99%

Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

Wang

Shiau

Lin

2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…After that point, RHEED pattern has shown no pattern and intensity changes. First RHEED spot intensity increase is related with the As 2 O 3 , As 2 O 5 and Ga 2 O desorption from the surface while the second one is related to more tightly bonded Ga 2 O 3 desorption from the GaAs surface [10].…”

Section: Contributedmentioning

confidence: 96%

Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

Arı

Polat

Karakaya

et al. 2015

Phys. Status Solidi C

View full text Add to dashboard Cite

CdTe based II‐VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X‐ray diffraction rocking curves (XRD RC) as low as 227 arc‐seconds with 0.5% thickness uniformity that a 2 µm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm‐1 in solar radiation spectrum. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Monitoring epiready semiconductor wafers

Cited by 29 publications

References 19 publications

Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux

Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux

Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

Contact Info

Product

Resources

About