Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques

Selmi, L.; Pavesi, M.; Wong, H.-S. Philip; Acovic, A.; Sangiorgi, E.

doi:10.1109/16.669568

Cited by 9 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, light emission from Si NMOSFET operating in the saturation region is reviewed, and it is believed that the light emission is due to the snap-back breakdown that occurs at the high field region near the corner between drain and substrate [57,58]. The type of light emission is also a sensitive hot-carrier degradation monitor [59].…”

Section: Discussionmentioning

confidence: 99%

Advances in Optical Communication

Das¹

2014

View full text Add to dashboard Cite

He is the author/coauthor of 6 book chapters, more than 100 peer-reviewed journal and international conference papers, and more than 20 NEC Japan's technical reports at NEC Japan. He is the editor of the books Optical Communication Systems and Optical Communication. His research interests include pulse propagation, wave-mixing, high-speed communication devices (semiconductor optical amplifiers), plasmonics and plasmonics-based communication devices (metal-semiconductormetal photodetectors), high efficiency solar cells (renewable energy).

show abstract

Section: Discussionmentioning

confidence: 99%

Advances in Optical Communication

Das¹

2014

View full text Add to dashboard Cite

show abstract

“…Finally, a growing interest is evinced in finding solutions able to monitor the degradation level of MOSFETs, in order to predict an imminent failure or possibly to compensate the negative effects from the increased on-resistance on the behavior of the converter. More precisely, various approaches are currently studied in this direction, either at circuit level by developing dedicated testing structures [5] or in combination with common conversion architectures [6], or by using advanced passive techniques like the measurement of the luminescent emission [7]. In this varied scenario, new improved transistor layouts as well as advanced passive measurements offer an interesting solution to the HCD prevention and monitoring problem, although they require specific equipment at very high costs.…”

Section: Introductionmentioning

confidence: 99%

An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation

Pizzotti

Crescentini

Tallarico

et al. 2019

2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

View full text Add to dashboard Cite

An integrated DC/DC converter with online monitoring of the degradation level of power MOSFETs due to hot-carrier injection (HCD) is proposed. The converter is able to dynamically estimate the on-resistance of the power switches and to provide its value to the user during normal operation. In fact, the correlation between an increase in on-resistance of power switches and HCD is fully documented, and it can be exploited to perform an estimation of degradation. The presented solution, developed in STMicroelectronics 90nm BCD technology, features a non-invasive current sensing and voltage sampling architecture, which is applied to a common boost DC/DC converter to evaluate the resistance of the switching power MOSFET. Without lack of generality, this specific sensing structure can be applied to any kind of converter, e.g. buck or buck-boost, as it doesn't require any change in the main conversion circuit.

show abstract

“…In practice, the light emission is attributed to the hot-carrier population under the condition of avalanche breakdown, which can be used for high-speed light-emitting devices, high-speed light amplifiers, and the analytic investigation of hot carrier distribution [2].…”

Section: Introductionmentioning

confidence: 99%

Current–voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs

Xu¹

2013

Appl. Opt.

View full text Add to dashboard Cite

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

show abstract

Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques

Cited by 9 publications

References 19 publications

Advances in Optical Communication

Advances in Optical Communication

An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation

Current–voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs

Contact Info

Product

Resources

About