Monitoring of intermixing and interdiffusion by x-ray diffraction of ion-implanted quantum-well structures

Abstract

The intermixing (and associated interdiffusion) resulting from ion implantation of argon ions into Cd1−xMnxTe quantum-well structures has been investigated. The experimental value of the mixing parameter of 1.5×103 Å/eV is large compared with the values reported for this parameter in metallic superlattices, and is consistent with an appreciable degree of inter diffusion accompanying the implantation process.

Diffusion

“…For example, ion implantation can produce vacancies which aid diffusion [16,17]. D = D(t), a function of time, as could occur during the annealing of radiation damage.…”

“…Ion implantation (see Kelly [21], Section 3.4, for an introduction) is one method of stimulating diffusion; it is controllable, reproducible and its spatial resolution can be used to pattern a semiconductor wafer. However, the focus of interest here is on ion implantation as a means of enhancing the diffusion of the material species already present [17,22,24]. optically active rare earth ions into a host semiconductor [28].…”

“…Alternatively, the structure, including the depth dependence of the diffusion, can be mapped directly by using double-crystal X-ray diffraction [31], a technique which has shown itself to be very valuable in monitoring the progress of interface intermixing [17].…”