Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents

Zheng, Dan; Kang, Yuting; Cao, Han; Chai, Xiaoguang; Fan, Tie; Ning, Puqi

doi:10.23919/cjee.2020.000014

Cited by 15 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At present, there is no good method for the heating phenomenon inside the cable head [5]. At present, there is also a method of temperature monitoring through optical fiber conduction; since this method requires the temperature sensing element to be closely attached to the surface of the object to be measured, it belongs to contact measurement, and this will undoubtedly cause certain hidden dangers for the safe operation of highvoltage electrical equipment, especially outdoor high-voltage electrical equipment [6,7].…”

Section: Introductionmentioning

confidence: 99%

On-Line Temperature Monitoring System of Electrical Equipment Based on Passive Wireless Sensor

Zhu

Yang

et al. 2022

Journal of Control Science and Engineering

View full text Add to dashboard Cite

In order to solve the temperature measurement problem of fully enclosed equipment for power equipment operation inspection, the authors propose an online temperature monitoring system for electrical equipment based on passive wireless sensors. Aiming at the disadvantages of traditional temperature monitoring methods, the system adopts radio frequency technology. The scheme mainly expounds the key technologies and switchgear implementation in the monitoring system research and discusses the feasibility of the system scheme through experiments. Monitor all important components at different times, and establish a temperature monitoring network to complete monitoring and management. According to the test results, in the case of overheating, the temperature can rise to more than 75°C, and the temperature difference measured wirelessly is 0.5°C, which is sufficient to indicate the health of the change. Electrical equipment, the accuracy, and real-time performance of temperature monitoring are guaranteed.

show abstract

Section: Introductionmentioning

confidence: 99%

On-Line Temperature Monitoring System of Electrical Equipment Based on Passive Wireless Sensor

Zhu

Yang

et al. 2022

Journal of Control Science and Engineering

View full text Add to dashboard Cite

show abstract

“…Temperature factors account for about 55% of power electronic system failures among various failure factors [3]. On-state voltage is considered a key parameter of power semiconductor devices, which is widely used as an indicator for device junction temperature (T j ) estimation and health monitoring [4], [5], [6], [7], [8]. Hence, accurately measuring V ds,on online to achieve T j detection and health status assessment is of great significance for improving the safety and reliability of the next-generation electric vehicles and preventing potentially catastrophic accidents.…”

Section: Introductionmentioning

confidence: 99%

A Highly Precise On-State Voltage Measurement Circuit With Dual Current Sources for Online Operation of SiC MOSFETs

Meng

Xiang

Zuo

et al. 2023

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

This letter proposes an on-state drain-source voltage (V ds,on ) measurement circuit for SiC MOS-FETs. The proposed circuit effectively solves the problem of inconsistent diode volt-ampere characteristics through an additional current source. The voltage difference between the two diodes is compensated by adjusting the auxiliary current under the condition of a fixed first current. This circuit does not require diode pre-selection and significantly improves measurement accuracy. The circuit is implemented in a double-pulse test (DPT) of a SiC MOSFET (900 V/23 A, 25 °C). The results show that the circuit has a fast response speed with a delay time of 0.4 μs. Even at the same current, the forward voltage difference between the two diodes reaches 3.32 mV. Compared to measurement results from a six-bit semi-digital multimeter, the measurement error of the proposed circuit is less than 1.5% at different currents and temperatures.

show abstract

“…Increasing the switching frequency is a simple approach for improving the performance of power converters, which can significantly reduce the volume and weight of the filters and increase the power density [9][10][11][12][13] . However, a high power density based on silicon (Si) devices is difficult to achieve by increasing the switching frequency because the performance of Si devices has reached their theoretical limitations [14][15][16][17] . In recent years, power converters based on Si devices have undergone remarkable upgrades with the usage of WBG devices, such as silicon carbide (SiC) and Gallium nitride (GaN) [18][19][20] , resulting in an increased junction operating temperature and higher switching speed capability [21] .…”

Section: Introductionmentioning

confidence: 99%

A review of WBG and Si devices hybrid applications

Zhang

Zheng

Lou

2021

Chin. J. Electr. Eng.

View full text Add to dashboard Cite

In recent years, next-generation power semiconductor devices, represented by silicon carbide (SiC) and gallium nitride (GaN), have gradually emerged. Because wide-bandgap (WBG) devices have better electrical characteristics than those of silicon (Si) based devices, they have attracted increased attention both from academic researchers and industrial engineers. Employing WBG devices will further improve the efficiency and power density of power converters. However, the current price of WBG devices remains extremely high. Thus, some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost. To summarize the current research on WBG/Si hybrid applications, the issues mentioned above with representative research approaches, results, and characteristics, are systematically reviewed. Finally, the current research on WBG/Si hybrid applications and their future trends are discussed.

show abstract

Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents

Cited by 15 publications

References 12 publications

On-Line Temperature Monitoring System of Electrical Equipment Based on Passive Wireless Sensor

On-Line Temperature Monitoring System of Electrical Equipment Based on Passive Wireless Sensor

A Highly Precise On-State Voltage Measurement Circuit With Dual Current Sources for Online Operation of SiC MOSFETs

A review of WBG and Si devices hybrid applications

Contact Info

Product

Resources

About