Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode

Yilmazoglu, Oktay; Considine, L.; Joshi, Ravi; Mimura, Hidenori; Pavlidis, D.; Hartnagel, H.L.; Schneider, Jörg J.; Еvtukh, А.А.; Semenenko, M.; Литовченко, В.Г.

doi:10.1116/1.4732117

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…5 GaN and its alloys are already employed for various optoelectronic applications such as high efficient light emitting diodes (LEDs), laser diodes (LDs), monochromatic electron emission, and ultraviolet photodetector devices. [6][7][8] GaN based LED devices are mostly grown on c-plane sapphire substrates due to the nonavailability of large sized single crystalline GaN wafers. Due to the large lattice mismatch (14%) between GaN and c-plane sapphire substrates, the a-plane sapphire can be an alternative substrate for GaN growth as there is a small lattice mismatch (<2%).…”

Section: Introductionmentioning

confidence: 99%

Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Ramesh

Tyagi

Singh

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Epitaxial thin GaN films ($60 nm) have been grown on a-plane sapphire substrates at different growth temperatures (500-700 C) using laser molecular beam epitaxy (LMBE). The effect of growth temperatures on the structural and optical properties of GaN layers grown on low temperature (LT) GaN buffer on prenitridated a-sapphire have been studied systematically. The in situ reflection high energy electron diffraction pattern revealed the three-dimensional epitaxial growth of GaN films on a-sapphire under the adopted growth conditions. The full width at half maximum (FWHM) value of x-ray rocking curves (XRCs) along GaN ( 0002) and (10-12) planes decreases with increasing growth temperature. The FWHM values of ( 0002) and (10-12) XRC for the 700 C grown GaN film are 1.09 and 1.08 , respectively. Atomic force microscopy characterization showed that the grain size of GaN increases from 30-60 to 70-125 nm with the increase in growth temperature as GaN coalescence time is shorter at high temperature. The refractive index value for the dense GaN film grown at 600 C is obtained to be $2.19 at the wavelength of 632 nm as deduced by spectroscopic ellipsometry. Photoluminescence spectroscopy confirmed that the epitaxial GaN layers grown on a-sapphire at 600-700 C possess near band edge emission at $3.39 eV, close to bulk GaN. The GaN growth at 700 C without a buffer still produced films with better crystalline and optical properties, but their surface morphology and coverage were inferior to those of the films grown with LT buffer. The results show that the growth temperature strongly influences the structural and optical quality of LMBE grown epitaxial GaN thin films on a-plane sapphire, and a growth temperature of >600 C is necessary to achieve good quality GaN films.

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Section: Introductionmentioning

confidence: 99%

Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Ramesh

Tyagi

Singh

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Resonant tunneling field emission of Si sponge-like structures

Semenenko

Antonin

Redko

et al. 2020

Journal of Applied Physics

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In this work, electron field emission from resonant tunneling systems based on Si sponge-like structures was studied. During the electrochemical etching of flat Si wafers using the galvanic anodization method, Si sponge-like structures were formed. Each non-monolithic Si wire includes preferably two types of Si particles with sizes ranging from 1 to 1.2 nm and from 1.3 to 1.4 nm. The smallest etching currents were possible to realize due to the galvanic anodization technique that resulted in the formation of more uniform structures. The structures obtained enable us to get reproducible resonant peaks during current flow in the field emission process. The origin of peaks was attributed to the resonant tunneling mechanism of electrons through the multibarrier structure.

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Keynote Speaker: Towards Miniaturized Vacuum Tubes for Millimeter and Terahertz Waves

Yilmazoglu

2023

2023 24th International Vacuum Electronics Conference (IVEC)

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Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode

Cited by 4 publications

References 17 publications

Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire

Resonant tunneling field emission of Si sponge-like structures

Keynote Speaker: Towards Miniaturized Vacuum Tubes for Millimeter and Terahertz Waves

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