Monocrystalline aluminium ohmic contact to <i>n</i>-GaAs by H2S adsorption

Massies, J.; Chaplart, J.; Laviron, M.; Linh, Nuyen T.

doi:10.1063/1.92473

Cited by 70 publications

(8 citation statements)

References 20 publications

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“…Furthermore they have a relatively low resistivity [8,10], a low lattice mismatch with Si(1 1 1) [11] and the possibility of epitaxial growth [11]. Although it is still unclear if epitaxial layers are superior to polycrystalline layers, the advantages of epitaxial over polycrystalline silicides could be numerous at the nanometre scale: a better control and improvement of the metal/semiconductor interfaces will provide a low specific contact resistance [12,13] and the absence of grain boundaries would decrease electromigration-related problems [14].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical properties

Natali

Plank

Stephen

et al. 2011

J. Phys. D: Appl. Phys.

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In this paper the effect of the growth temperature on the structural and electrical properties of samarium silicide films is investigated. The growth of the epitaxial films is performed under ultrahigh vacuum by reactive-deposition epitaxy on silicon (0 0 1) substrates. The structural properties are assessed by reflection high-energy electron diffraction and x-ray diffractometry. Random and channelling Rutherford backscattering experiments show that the films have the correct stoichiometry, i.e. Sm/Si ratio = 1 : 2, with channelling yields as low as 20% for the best samples. The electrical properties of these films are studied by Hall effect and resistivity measurements. The films have a metallic character, with a high concentration of n-type charge carriers (>10 22 cm −3) and a resistivity lower than 200 µ cm at room temperature. The metallic character is confirmed by the experimental optical conductivity deduced from ellipsometry experiments. Finally, evidence is presented showing the potential of SmSi 2 /n-type Si junctions for electronic application with a Schottky barrier height of about 0.32 eV.

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Section: Introductionmentioning

confidence: 99%

Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical properties

Natali

Plank

Stephen

et al. 2011

J. Phys. D: Appl. Phys.

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“…The control of barrier height of metal-semiconductor is very important in semiconductor devices. Since the observation of significant changes in the barrier height of metal-InP [l] and metal-GaAs [2] after exposing to H,S numerous works have been reported regarding the effect of passivation of the GaAs on the performance of several devices [3 to 61. The passivation is made by chemical treatment of GaAs with inorganic sulfides such as Na,S .…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on the barrier height of metal-GaAs with selenium interfacial layer

Eftekhari

1993

Phys. Stat. Sol. (a)

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“…Analogously to the effect of column-V elements on Si surface, column-VI elements are known to strongly modify the surface electronic properties of III-V semiconductors [10] giving passivating effects [11] and are expected to lower the surface energy. In this Letter we show that Te acts as a surfactant for the growth of InAs on GaAs.…”

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confidence: 99%

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers

1992

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It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(OOl) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delayed plastic relaxation of the strain is correlated with the modification of the growth mode via surface energy minimization.PACS numbers: 68.55. Bd, 61.14.Hg, 68.35.Bs One of the main goals in contemporary material science research is to associate materials with different properties in thin epitaxial layers. This is especially true in the field of semiconductor physics and technology. There are, however, two fundamental limitations in the choice of materials from which highly perfect epitaxial structures can be made: the surface free energy of the deposit must not be greater than that of the substrate and the strain energy due to the lattice mismatch stress must be low enough to be elastically accommodated. If these particular conditions are fulfilled, the epitaxial growth follows the ideal layer-by-layer 2D growth mode [Franck-van der Merwe (FM) mode]. When the surface free energy of the deposit is higher than that of the substrate, 3D growth occurs as predicted by the theory of wetting phenomena [Volmer-Weber (VW) mode]. Finally, for lattice mismatched materials with suitable surface free energies, the growth mode generally undergoes a 2D-3D transition which allows the reduction of the strain energy of the system [Stranski-Krastanov (SK) mode]. This is the case for the growth of Ge on Si (lattice mismatch ~4.2%), which has been a subject of intense study in recent years [1][2][3][4][5]. In this system, the 2D growth is limited to 3-4 monolayers (ML) [6]. The SK growth mode is also well known to occur in III-V semiconductors, the prototypical system being InAs/GaAs (lattice mismatch «7.2%). Islands begin to form after only 1-2 ML of InAs deposited on GaAs(OOl) [7,8], limiting the development of devices based on InAs/GaAs heterostructures in spite of their considerable potential interest for both microwave and optoelectronic applications. One of the most promising ways to increase the thickness for which pseudomorphic 2D growth can be maintained is the use of surfactants. This has been recently demonstrated by Copel and co-workers [1,4,9] for the Ge/Si system using As and Sb as surfactant species.Analogously to the effect of column-V elements on Si surface, column-VI elements are known to strongly modify the surface electronic properties of III-V semiconductors [10] giving passivating effects [11] and are expected to lower the surface energy. In this Letter we show that Te acts as a surfactant for the growth of InAs on GaAs. While beyond the first InAs monolayer the formation of islands is observed when the growth is performed directly on GaAs, the 2D coherent growth is sustained up to ~6 ML when using a Te surfactant layer. Moreover, the onset of lattice relaxtion is delayed from 1.5 to 6 ML.The growth of InAs on GaAs(OOl) by molecular-beam epitaxy was perform...

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Monocrystalline aluminium ohmic contact to n-GaAs by H2S adsorption

Cited by 70 publications

References 20 publications

Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical properties

Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical properties

Effect of rapid thermal annealing on the barrier height of metal-GaAs with selenium interfacial layer

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers

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