Monodisperse GaN nanowires prepared by metal-assisted chemical etching with in situ catalyst deposition

Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices

“…While extensive efforts involving MaCE have focused on Si, MaCE has also been used for the fabrication of GaAs nanowires [10], GaAs hole arrays [11] and GaN nanowires [12]. However, there has been a limited number of reports on MaCE of germanium [13][14][15], a carbon-group element that is chemically similar to silicon.…”

Catalyst‐Assisted Electroless Flattening of Ge Surfaces in Dissolved‐O2‐Containing Water

“…[7][8][9][10][11][12][13] In which, aS is urface loaded with an oble metal is immersed in am ixed solution of HF and an oxidant such as H 2 O 2 .T he oxidanti sc atalytically reduced on the metal surface.This leads to enhanced oxidation of the Si surface around the deposited metal, and the resultingo xide (SiO 2 )l ayer is subsequently stripped off in HF.T his etchingm ethod has been applied to other semiconductors such as Ge, [14] SiGe, [15] GaAs, [16,17] SiC, [18] and GaN. [19,20] Metal-assisted chemical etching has, so far,b een used to fabricate three-dimensional structures such as pores and nanowires. We proposet he use of such electroless catalyst-assisted etching to flatten aG es urface, and the qualityo ft he flattened surfacei si nvestigated on the nanometer scale by using atomic force microscopy (AFM).The electroless reaction in this study is very simple, as showni nE quations (1)-(3).…”

Photonic crystal membrane reflectors by magnetic field-guided metal-assisted chemical etching

“…[1][2][3] In recent years, several research groups have demonstrated the use of MacEtch for the fabrication of micro/nanostructures of various aspect ratios and surface morphologies using both Si and compound semiconductors. 1,[4][5][6][7][8][9] As the technique relies on patterning of a thin noble metallic catalyst layer, which sinks down and engraves into the semiconductor during etching, the semiconductor structures formed using MacEtch are exactly complementary to the metal patterns. Therefore, metal mesh patterns produce vertical pillars 4,[8][9][10] and discrete metal particles yield cylindrical holes.…”