Monolayer graphene sensing enabled by the strong Fano-resonant metasurface

Li, Quan; Cong, Longqing; Singh, Ranjan; Xu, Ningning; Cao, Wei; Zhang, Xueqian; Tian, Zhen; Du, Liangliang; Han, Jiaguang; Zhang, Weili

doi:10.1039/c6nr01911k

Cited by 119 publications

(60 citation statements)

References 56 publications

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“…Despite this high contrast ratio, the required switching voltage may still be too high. Following this work, more efforts have also been made to achieve an efficient and fast modulation on the amplitude or phase of transmissions, reflections and even beam deflections from NIR to THz regimes . Kim et al experimentally demonstrate a metasurface combined with a graphene layer, as depicted in Figure d .…”

Section: Tuning Via Free‐carrier Effectsmentioning

confidence: 96%

Tunable Metasurfaces Based on Active Materials

Cui

Bai

Sun

2019

Adv Funct Materials

216

111

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Metasurfaces, planer artificial materials composed of subwavelength unit cells, have shown superior abilities to manipulate the wavefronts of electromagnetic waves. In the last few years, metasurfaces have been a burgeoning field of research, with a large variety of functional devices, including planar lenses, beam deflectors, polarization converters, and metaholograms, being demonstrated. Up to date, the majority of metasurfaces cannot be tuned postfabrication. Yet, the dynamic control of optical properties of metasurfaces is highly desirable for a plethora of applications including free space optical communications, holographic displays, and depth sensing. Recently, much effort has been made to exploit active materials, whose optical properties can be controlled under external stimuli, for the dynamic control of metasurfaces. The tunability enabled by active materials can be attributed to various mechanisms, including but not limited to thermo‐optic effects, free‐carrier effects, and phase transitions. This short review summarizes the recent progress on tunable metasurfaces based on various approaches and analyzes their respective advantages and challenges to be confronted with. A number of potential future directions are also discussed at the end.

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Section: Tuning Via Free‐carrier Effectsmentioning

confidence: 96%

Tunable Metasurfaces Based on Active Materials

Cui

Bai

Sun

2019

Adv Funct Materials

216

111

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“…In such a scenario, interaction with the near-field of resonant structures (typically metallic) could prove useful in improving the sensitivity. [154][155][156] It is well known that graphene can support terahertz plasmons with a high degree of confinement (as compared to metals at the same frequencies). [146][147][148][149] Similarly, terahertz nanoantennas have been successfully employed for the detection of antibiotics, sugars, and RDX molecules.…”

Section: Sensing and Spectroscopy Of Moleculesmentioning

confidence: 99%

2D Materials for Terahertz Modulation

Gopalan

Sensale‐Rodriguez

2019

Advanced Optical Materials

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power consumption and minimizing cross-talk (maintain signal fidelity). As a result, terabit data communication can be made feasible with the help of broadband all-optical devices and circuits. [4] The technology for designing optical components and circuits operating at visible and NIR wavelengths has matured significantly over the last several decades, ensuring their widespread integration. While we can work toward improving data transmission rates of existing communication technology, shortage of spectral bandwidth for data transmission has become a looming problem over time. This has motivated researchers to seek out previously unused portions of the electromagnetic spectrum. The "terahertz gap" (≈30 µm-3 mm) has attracted considerable attention from researchers seeking to bridge the gap between the optical/IR and microwave spectrum. [5,6] Similar to the optical domain, the invention, optimization, and commercialization of discrete components such as sources, modulators, and detectors are necessary for the widespread use and integration of terahertz technologies. Electronic means of terahertz generation utilizing semiconductors (Si, GaAs) IMPATT [7] and Gunn diodes [8] have been developed. In conjunction with a frequency doubler/ tripler circuits, they typically operate on the lower end of the terahertz spectrum (0.1-1 THz); although the power output at higher frequency multiples might be significantly lower as compared to its fundamental mode. Additionally, InGaAs/ InP HBTs and InP HEMTs with cutoff frequencies >600 GHz have been demonstrated. [9,10] The advent of femtosecond lasers has paved the way for the generation of terahertz radiation via photoconductive switches, [11] photo-Dember effect [12,13] and nonlinear optical rectification in organic and inorganic crystals. [14][15][16] Femtosecond lasers have helped develop time domain terahertz systems that have been instrumental in ultrafast spectroscopy to study transient carrier dynamics of semiconductors. Development of terahertz quantum cascade lasers (THz-QCL) employing intersubband transitions in AlGaAs/GaAs quantum wells [17][18][19][20] is a notable milestone in terahertz lasing. In a complementary fashion, terahertz detection could be performed by electro-optic sampling in nonlinear crystals, [21] photoconductive antennas on low-temperature GaAs, [22,23] plasma wave oscillation in a field-effect channel, [24,25] etc. Finally, akin to the compact and economic components available at optical frequencies for the generation, manipulation, and detection, terahertz technology requires Terahertz waves spanning over the 0.1 to 10 THz region of the electromagnetic spectrum have attracted significant attention owing to a variety of potential applications such as short-range high-speed data transmission, noninvasive screening and detection, materials characterization, spectroscopy, etc. This has resulted in massive strides in the development of essential system components such as broadband terahertz sources, detector arrays with high responsivity, as well as...

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“…They have been widely applied to control the radiations in the optical, infrared, terahertz and microwave ranges [2][3][4][5][6][7][8][9][10][11]. In the terahertz band, extensive studies on functional metamaterial devices have been well demonstrated, including invisibility cloaks, sensors, lenses, filters, modulators, etc [12][13][14][15][16][17][18][19][20][21][22][23][24][25]. In a general way, the essential rule for designing metamaterials is to build up certain resonance modes in the unit cell, such as inductor-capacitor circuit (LC) resonance, Fano resonance, dipolar resonance, and so forth.…”

Section: Introductionmentioning

confidence: 99%

“…The Fano resonance is generally derived from asymmetric spit-ring resonators (TASRs), which can support extremely high-quality (Q) factor resonances with low radiative losses [27,28]. The dipolar resonance can be directly excited by the external electromagnetic wave, and usually exhibit a robust resonance which is hardly to be altered [15]. However, these studies mainly focus on independent resonance and rarely consider the resonance switching effect.…”

Section: Introductionmentioning

confidence: 99%

Switching of plasmonic resonances in multi-gap resonators at terahertz frequencies

Luo

Liu

et al. 2020

Mater. Res. Express

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Switching plasmonic resonance modes in metamaterials have drawn enormous attention in recent years due to its great potential in applications in electromagnetic modulation and sensing. The switching process is essentially dependent on the connection way in the gaps of the metamaterial structure. In this work, we experimentally investigate the resonance switching effect in a multi-gap metamaterial structure at terahertz frequencies. It is found that a new inductor-capacitor circuit (LC) resonance would generate if the center gaps are totally connected. By decomposing the types of the connection in the center gaps, it is found that under horizontally polarized incidences, such switching effect is attributed to the horizontal connection (HC), while the vertical connection (VC) cannot bring any change in the transmission. This characteristic is further theoretically generalized to an active modulator by replacing the metallic HC to vanadium dioxide (VO 2 ) HC, where the dynamic switching effect is observed. The detail study in the resonance switching effect may broaden the avenues toward the control of terahertz waves and the development of modulators and sensors in the terahertz band.

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Monolayer graphene sensing enabled by the strong Fano-resonant metasurface

Cited by 119 publications

References 56 publications

Tunable Metasurfaces Based on Active Materials

Tunable Metasurfaces Based on Active Materials

2D Materials for Terahertz Modulation

Switching of plasmonic resonances in multi-gap resonators at terahertz frequencies

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