2022
DOI: 10.1103/physrevmaterials.6.104005
|View full text |Cite
|
Sign up to set email alerts
|

Monolayer C2/mSnX ( X=P , As): An in-plane anisotropic two-dimensional direct band gap semiconductor with ultrahigh mobility, ideal IR-VIS light tra

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 62 publications
0
1
0
Order By: Relevance
“…[31][32][33] Thereafter, it has inspired several theoretical studies about monolayer M 2 X 2 (C2/m). [34][35][36][37] However, in recent years, there appears to be a heightened research focuses on the monolayer P-6m2 phase M 2 X 2 , primarily due to its appealing optical, thermoelectric, and distinctive Mexican-hatshaped electronic energy band properties. [30,[38][39][40][41] Moreover, more interesting behaviors are found in this Janus structure where the mirror symmetry is broken.…”
Section: Introductionmentioning
confidence: 99%
“…[31][32][33] Thereafter, it has inspired several theoretical studies about monolayer M 2 X 2 (C2/m). [34][35][36][37] However, in recent years, there appears to be a heightened research focuses on the monolayer P-6m2 phase M 2 X 2 , primarily due to its appealing optical, thermoelectric, and distinctive Mexican-hatshaped electronic energy band properties. [30,[38][39][40][41] Moreover, more interesting behaviors are found in this Janus structure where the mirror symmetry is broken.…”
Section: Introductionmentioning
confidence: 99%