Monolayer MoS₂ Synaptic Transistors for High-Temperature Neuromorphic Applications

Abstract

As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS 2 as the channel and Na + -diffused SiO 2 as the ionic gate medium. A large on/off ratio of 10 6 can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS 2 transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.

Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing

“…Finally, the properties of our α-MoO 3 synaptic transistor were compared with those of other devices reported in the literature, which were summarized in Table 1. 19–21,26,27,43–45 Our solid-state device shows a high stability and good recognition accuracy. What's more, no ionic liquid and organic material is adopted in our device, which make it more compatible with current semiconductor processes.…”

Ion rectification based on gel polymer electrolyte ionic diode

“…6c . Due to the demand for intelligential applications in aerospace, deep-well drilling, and high-speed automobiles 36 , EPSC is also demonstrated at an elevated temperature (Fig. 6d ).…”

Dual-gate manipulation of a HfZrOx-based MoS2 field-effect transistor towards enhanced neural network applications

“…[18][19][20] The accuracy of the ANN requires high linearity in the LTP characteristics of the synaptic device, which corresponds to a relatively uniform distribution of the device conductance states within the adjustable conductance range. 21 The LTP characteristics of many ion gated devices show good linearity, 22,23 but these devices usually need to introduce metal ions into the channel area, which usually have strong mobility in the whole integrated circuit. It very easy to cause device failure and poor compatibility for these metal ions with modern COMS processes.…”