Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities Appl. Phys. Lett. 101, 132105 (2012) Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1−xCoxSy films J. Appl. Phys. 112, 063712 (2012) Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire J. Appl. Phys. 112, 063112 (2012) Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.2Te:In crystal Appl. Phys. Lett. 101, 091115 (2012) Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory Temperature (11-250 K) and excitation power (5-480 mW) dependent infrared photoluminescence (PL) measurements are conducted on a HgTe=Hg 0:05 Cd 0:95 Te superlattice (SL) sample in a spectral range of 5-18 lm with adequate spectral resolution and signal-to-noise ratio. Three PL components are identified from the evolution of the PL lineshape with temperature although the full-width at half-maximum (FWHM) of the whole PL signal is only about 7 meV at 11 K, for which different changes of the energy, FWHM, and integral intensity are evidenced. The mechanisms are clarified that the medium-energy component is due to electron-heavy hole intersubband transition, while the low-energy (LE) component correlates to localized states and the high-energy (HE) one may originate in interfacial inhomogeneous chemical intermixing and Brillouin-zone boundary effects. The LE and HE component-related effects are responsible for the PL quality of the SL at the temperatures well below and above 77 K, respectively. V C 2012 American Institute of Physics. [http://dx.