Monolithic CMOS—MEMS Pure Oxide Tri-Axis Accelerometers for Temperature Stabilization and Performance Enhancement

Tsai, Ming-Han; Liu, Yu‐Chia; Liang, Kai-Chih; Fang, Weileun

doi:10.1109/jmems.2015.2452270

Cited by 29 publications

(30 citation statements)

References 27 publications

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“…Statistical curvature data of all the possible stacks is, therefore, very interesting, so the corresponding test cantilevers were included in all analyzed wafers. These are different from the stacks used in other CMOS-MEMS processes as in this study only metals are used, and there is no oxide surrounding the metal layers as in [3,9,[22][23][24], which is not possible in our case due to our release process characteristics. The typical stacks used in this work are metal cantilevers joined by W vias distributed in a rectangular array as they are commonly used in CMOS designs.…”

Section: B Test Structure Design and Modelingmentioning

confidence: 97%

“…One of the main concerns of CMOS-MEMS processes is the curvature of the released BEOL structural layers [3][4][5], which is caused by the residual stresses and thermal coefficient mismatches of the different layers that form each BEOL layer. These are not tightly monitored or controlled by the CMOS foundries [6] given that their effects mostly arise after a release step only necessary for MEMS fabrication and, therefore, do not pose a strong concern for the reliability of standard CMOS circuits.…”

Section: Introductionmentioning

confidence: 99%

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Curvature of BEOL Cantilevers in CMOS-MEMS Processes

Valle

Fernandez

Madrenas

et al. 2017

J. Microelectromech. Syst.

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This article presents the curvature characterization results of released back-end-of-line (BEOL) 5 µm-wide cantilevers for two different 0.18 µm 1P6M complementary metal-oxide semiconductor microelectromechanical systems (CMOS-MEMS) processes. Results from different runs and lots from each foundry are presented. The methodology and accuracy of the characterization approach, based on optical measurements of test cantilever curvature are also discussed. Special emphasis is given to the curvature average and variability as a function of the number of stacked layers. Analythical equations for modeling the bending behavior of stacked cantilevers as a function of the tungsten (W) vias that join the metal layers are presented. In addition, the effect of various post-processing conditions and design techniques on the curvature of both single and stacked cantilevers is analyzed. In particular, surpassing certain timedependent temperature stress conditions after release lead to curvature shifts larger than one order of magnitude. Also, the W via design was found to strongly affect the curvature of the test cantilevers.

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Section: B Test Structure Design and Modelingmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Curvature of BEOL Cantilevers in CMOS-MEMS Processes

Valle

Fernandez

Madrenas

et al. 2017

J. Microelectromech. Syst.

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“…The plate rotor consists of a stack of M3–M5 metals kept together with long vias, which provide both mechanical attachment and electrical connection between the different metal layers. Moreover, the use of various metal and oxide layers stack reduces the plate curvature after oxide release [ 19 , 25 , 26 , 27 ]. In order to allow the release agent to penetrate the MEMS structure and release the oxide between the rotor and the stator, the MEMS plate has

m openings uniformly distributed across the plate.…”

Section: Proposed Devicementioning

confidence: 99%

A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation

Sanchez-Chiva

Valle

Fernandez

et al. 2020

Sensors

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Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of 85.7% with a good uniformity of the resonance frequency fr¯=56.8 kHz, σfr=5.1 kHz and quality factor Q¯=7.3, σQ=1.6 at ambient pressure. Device sensitivity to magnetic field is 37.6fA·μT−1 at P=1130 Pa when driven with I=1mApp.

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“…Tsai developed a complementary metal-oxide-semiconductor (CMOS) micro-electromechanical system (MEMS) accelerometer. The accelerometer has higher sensitivity and suppresses temperature drift significantly [4]. Xu proposed an INS/uwb integrated system based on uffb to effectively reduce the drift error of the sensor [5].…”

Section: Introductionmentioning

confidence: 99%

Temperature Drift Compensation for High-G MEMS Accelerometer Based on RBF NN Improved Method

Zhu

Pang²,

Zhang

et al. 2019

Applied Sciences

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In this paper, the method for compensating the temperature drift of high-G MEMS accelerometer (HGMA) is proposed, including radial basis function neural network (RBF NN), RBF NN based on genetic algorithm (GA), RBF NN based on GA with Kalman filter (KF), and the RBF NN + GA + KF method compensated by the temperature drift model. First, this paper introduces an HGMA structure working principle, conducts a finite element analysis, and produces the results. The simulation results show that the HGMA working mode is the 1st order mode, and its resonant frequency is 408 kHz. The 2nd order mode resonant frequency is 667 kHz, and the gap with the first mode is 260 kHz, indicating that the coupling movement between the two modes is tiny, so the HGMA has good linearity. Then, a temperature experiment is performed to obtain the output value of HGMA. The output values of HGMA are analyzed and optimized by using the algorithms proposed in this paper. The processing results show that the RBF NN + GA + KF method compensated by the temperature drift model achieves the best denoing consequent. The processing results show that the temperature drift of the HGMA is effectively compensated. The final results show that acceleration random walking improved from 17130 g/h/Hz0.5 to 765.3 g/h/Hz0.5, and bias stability improved from 4720 g/h to 57.27 g/h, respectively. The results show that after using the RBF NN + GA + KF method, combined with the temperature drift model, the temperature drift trend and noise characteristics of HGMA are well optimized.

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Monolithic CMOS—MEMS Pure Oxide Tri-Axis Accelerometers for Temperature Stabilization and Performance Enhancement

Cited by 29 publications

References 27 publications

Curvature of BEOL Cantilevers in CMOS-MEMS Processes

Curvature of BEOL Cantilevers in CMOS-MEMS Processes

A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation

Temperature Drift Compensation for High-G MEMS Accelerometer Based on RBF NN Improved Method

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