Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications

Li, Ang; Cui, Miao; Shen, Yi; Li, Ziqian; Li, Wen; Mitrović, Ivona Z.; Wen, Huiqing; Zhao, Cezhou

doi:10.1109/ted.2021.3075425

Cited by 25 publications

(11 citation statements)

References 26 publications

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“…The output V out of a comparator is high when V + > V – , and reversed, otherwise . As in Figure b, port V + of Comp#1 is pulled up via a 1 MΩ resistor R 14 and then V out1 is set high after power-up.…”

Section: Resultsmentioning

confidence: 99%

“…The output V out of a comparator is high when V + > V − , and reversed, otherwise. 39 As in Figure 2b, port V + of Comp#1 is pulled up via a 1 MΩ resistor R 14 and then V out1 is set high after power-up. Consequently, the output Q of flip-flop is set to be high, which results in the output V trig of trigger circuit being set high most of the time after power-up.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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An Integrated Self-Powered Real-Time Pedometer System with Ultrafast Response and High Accuracy

Chen

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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As accurate step counting is a critical indicator for exercise evaluation in daily life, pedometers give a quantitative prediction of steps and analyze the amount of exercise to regulate the exercise plan. However, the merchandized pedometers still suffer from limited battery life and low accuracy. In this work, an integrated self-powered real-time pedometer system has been demonstrated. The highly integrated system contains a porous triboelectric nanogenerator (P-TENG), a data acquisition and processing (DAQP) module, and a mobile phone APP. The P-TENG works as a pressure sensor that generates electrical signals synchronized with users’ footsteps, and combining it with the analogue front-end (AFE) circuit yields an ultrafast response time of 8 ms. Moreover, the combination of a mini press-to-spin-type electromagnetic generator (EMG) and a supercapacitor enables a self-powered and self-sustained operation of the entire pedometer system. This work implements the regulation of TENG signals by electronic circuit design and proposes a highly integrated system. The improved reliability and practicality provide more possibilities for wearable self-powered electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

An Integrated Self-Powered Real-Time Pedometer System with Ultrafast Response and High Accuracy

Chen

Liu

et al. 2021

ACS Appl. Mater. Interfaces

Self Cite

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“…drivers). For this reason, monolithic integration of power GaN circuits is recently offered also as a foundry service and is still a hot industrial research topic [36], [37].…”

Section: B Maturity Of Wbg Materials Technologiesmentioning

confidence: 99%

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

et al. 2021

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The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance of power semiconductor devices, where massive industrial investments and intense research efforts are being devoted to new wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). The electrical and thermal properties of SiC and GaN enable the fabrication of semiconductor power devices with performance well beyond the limits of silicon. However, a massive migration of the power electronics industry towards WBG materials can be obtained only once the corresponding fabrication technology reaches a sufficient maturity and a competitive cost. In this paper, we present a perspective of power electronics based on WBG semiconductors, from fundamental material characteristics of SiC and GaN to their potential impacts on the power semiconductor device market. Some application cases are also presented, with specific benchmarks against a corresponding implementation realized with silicon devices, focusing on both achievable performance and system cost.

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“…[1][2][3][4][5][6][7][8][9] However, due to the fact that devices operate at high voltage and high frequency, parasitic inductance and capacitance affect the switching characteristics of devices, making it difficult to accurately model the switching process of GaN devices. [10][11][12][13][14][15] In recent years, there have been many studies of modeling the switching characteristics of GaN devices. Under high voltage and high frequency operating conditions, extremely high dv/dt and di/dt can produce serious oscillations on the gate and drain of GaN HEMTs, especially the risky gate oscillation, which may directly lead to the gate breakdown of the device.…”

Section: Introductionmentioning

confidence: 99%

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits

Luo

Zhao

et al. 2023

Physica Status Solidi (a)

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This paper analyzes the issue of gate voltage oscillations in AlGaN/GaN high electron mobility transistors (HEMTs) based on the half‐bridge circuit. With the influence of the parasitic parameters, the variation of high drain‐source voltage (Vds) can affect the gate‐source voltage (Vgs), thus, resulting in serious gate voltage oscillations, which may cause over‐voltage, false turn‐on/off, and even gate breakdown. A large‐signal model is proposed to study this oscillations phenomenon. The oscillation model of Vgs is proposed as a step response of Vds. Based on the model, the influence of Vds and circuit parameters on Vgs is investigated and guidelines to suppress the oscillation are given. Reducing the gate and power loop inductance in PCB wiring, increasing the gate resistance of inactive switch can be significantly suppress the oscillation. Finally, the model is verified by both simulation results and experimental results.This article is protected by copyright. All rights reserved.

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Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications

Cited by 25 publications

References 26 publications

An Integrated Self-Powered Real-Time Pedometer System with Ultrafast Response and High Accuracy

An Integrated Self-Powered Real-Time Pedometer System with Ultrafast Response and High Accuracy

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits

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