Monolithic Complementary Inverters Based on Organic Single Crystals

High performance CMOS-like inverter based on an ambipolar organic semiconductor and low cost metals

“…18 Herein we demonstrate that high performance OFETs and CMOS-like inverters can be fabricated using very simple process with 4Cl-Azapen. The carrier mobilities of the OFETs were much improved than previous report, 18 and the CMOS-like inverters exhibited excellent performance, 13,16,19,20 including high voltage gain and high noise margin. Moreover, the performance of inverters prepared using low-cost metals also showed good performance.…”

“…1(b)]. Alternatively, metals with different work functions can be used in an asymmetric electrode structures to ensure the ambipolar transportation within one component semiconductor 13 [ Fig. 1(c)].…”

High Electron Mobility in Air for N,N′‐1H,1H‐Perfluorobutyldicyanoperylene Carboxydi‐imide Solution‐Crystallized Thin‐Film Transistors on Hydrophobic Surfaces

“…The DC-gain value of the inverter, defi ned by dV OUT / dV IN , is also plotted, so that a maximum gain of 120 is demonstrated at approximately V D = 50 V. This value is far greater than those for solution-processed devices [ 1c ] and is comparable to the highest-performance complementary inverters using vacuum-deposited organic semiconductors. [17][18][19] Since the sharpness of the inversion characteristics critically depends on the steepness of subthreshold slope, our results indicate that the shallow-trap density at the interface was minimized in solution-crystallized thin fi lms of both p-and n-type semiconductors without grain boundaries, owing to the excellent crystallinity of the solution-processed PDIF-CN2 and C8-BTBT thin fi lms. Thus, we believe that our results offer a unique path to fabricating high-mobility n-type TFTs with mobilities approaching those of the corresponding single crystals.…”

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

“…We attribute this to the large mobility unbalance (l h > 100l e ) arising from the long-range order of the rubrene SC layer, which allows mobilities as high as 10 cm 2 V À1 s À1 , in contrast to the low electron mobility observed in PC 61 BM amorphous thin-film transistors (10 À2 cm 2 V À1 s À1 ). 1,17 Note that ambipolar operation in monolithic or bilayer/heterojunction OFETs often requires lower-work function electrodes, 18,19 trap passivating layers, 5 and higher operating voltagesnone of which were used herein.…”