Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Qiao, Zhongliang; Tang, Xiaohong; Li, Xiang; Bo, Baoxue; Gao, Xinliang; Qu, Yi; Liu, Chongyang

doi:10.1109/jeds.2017.2660531

Cited by 7 publications

(5 citation statements)

References 34 publications

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“…In this work, 1.06-µm InGaAs/GaAs DQW laser structures, with asymmetric waveguide, were grown on n-GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD). The detailed epitaxial structure is shown in the Table 1 , similar to our previous study 24 .…”

Section: Device Overview and Experimental Setupsupporting

confidence: 57%

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Qiao

Sia

et al. 2022

Sci Rep

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Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the modal gain characteristics of the MLL.

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Section: Device Overview and Experimental Setupsupporting

confidence: 57%

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Qiao

Sia

et al. 2022

Sci Rep

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“…Ti/Au layers were evaporated to form ohmic contact of the p-side, and Ni/Ge/ Au/Ni/Au layers were used as n-side ohmic contact after substrate thinning of the wafer. The details of the laser fabrication process can be found in the references [14][15][16][17].…”

Section: Structural Design and Experimental Detailsmentioning

confidence: 99%

High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Qiao

et al. 2019

Semicond. Sci. Technol.

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High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric hererostructure semiconductor lasers have been designed, fabricated and characterized. The laser structure, grown by metal-organic chemical vapor deposition (MOCVD), mainly consists of compositionally graded p-Al x Ga 1−x As upper cladding layers, a p-Al x Ga 1−x As upper waveguide layer, a 1.06-μm InGaAs/GaAs DQW active region, an un-doped In 1−x Ga x As y P 1−y lower waveguide layer, and compositionally graded n-doped In 1−x Ga x As y P 1−y lower cladding layers. Measurement results of the as-cleaved ridge waveguide (RWG) lasers with a contact ridge width of 25 μm and different cavity lengths (900 to 2765 μm) demonstrated state-of-the-art performances with a high internal quantum efficiency (η i ) of ∼98.4% and a low internal optical loss (α i ) of ∼1.01 cm −1 at 20 °C. The laser has demonstrated high characteristic temperatures of 245 K (T 0 ) and 663 K (T 1 ) from 20 to 50 °C, and the cavity length dependent behaviour of T 0 and T 1 has also been investigated from 20 to 80 °C. Furthermore, a low transparency current density (J tr ) of 77 A/cm 2 /QW in this laser structure is obtained at 20 °C, which is among one of the lowest values reported so far for 1.06-μm InGaAs/GaAs semiconductor lasers.

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“…In this work, 1.06-µm InGaAs/GaAs DQW laser structures, with asymmetric waveguide, were grown on n-GaAs(100) substrates by metalorganic chemical vapor deposition (MOCVD). The detailed epitaxial structure is shown in the Table I , similar to our previous study [22]. B.…”

Section: A Materials Structurementioning

confidence: 55%

Modal Gain Characteristics of A Two-section InGaAs/GaAs Double Quantum Well Passively Mode-locked Laser with Asymmetric Waveguide

Qiao¹,

Li²,

Sia³

et al. 2021

Preprint

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Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, concluding the layers of P-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ∼1.06µm, with a fundamental repetition rate at ∼19.56GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was compressed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the differential gain of the MLL.

show abstract

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Cited by 7 publications

References 34 publications

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Modal Gain Characteristics of A Two-section InGaAs/GaAs Double Quantum Well Passively Mode-locked Laser with Asymmetric Waveguide

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